Materials in nanopipes of undoped GaN

Junyong Kang; Tomoya Ogawa

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Materials in nanopipes of undoped GaN

机译：未掺杂GaN纳米管中的材料

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The nanopipes in undoped GaN epilayers grown on sapphire substrates were investigated by field emission high-resolution electron microscopy (HREM) and energy-dispersive x-ray spectrometry (EDS). In the HREM images, the cores of the nanopipes appeared disordered in the thin regions and more ordered in the thicker regions, indicating the amorphous layer on the surface has a significant influence on the visible image of the nanopipe in the thin regions. The EDS spectra showed that composition of the materials in nanopipes was mainly oxygen, carbon, and gallium elements. The results suggest that the nanopipes are related to impurities.

机译：通过场发射高分辨率电子显微镜（HREM）和能量色散X射线光谱（EDS）研究了在蓝宝石衬底上生长的未掺杂GaN外延层中的纳米管。在HREM图像中，纳米管的核心在薄区域中显得无序，在较厚的区域中更有序，这表明表面上的非晶层对薄区域中的纳米管的可见图像有重大影响。 EDS光谱表明，纳米管中材料的成分主要是氧，碳和镓元素。结果表明，纳米管与杂质有关。

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《Journal of Materials Research》 |1999年第1期|1-4|共4页
作者
Junyong Kang; Tomoya Ogawa;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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2. Dependence of capacitancevoltage characteristics of nominally undoped AlGaN/GaN heterostructures on several key parameters of the materials [J] . Tan G., Su Y. Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2011,第15期

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4. GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes [C] . F. Yun, L. He, M. A. Reshchikov, Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US . 2003

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8. Growth of Doped and Undoped Single Crystal Laser Materials in the System (MF2)x.(YF3)(1-x). [R] . balascio,joseph f. 1975

机译：系统中掺杂和未掺杂单晶激光材料的生长（mF2）x。（YF3）（1-x）。

Materials in nanopipes of undoped GaN

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