Lattice-distortion-induced amorphization in indented [110] silicon

Y. Q. Wu; Y. B. Xu

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Lattice-distortion-induced amorphization in indented [110] silicon

机译：[110]凹进硅中晶格畸变引起的非晶化

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High-resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.

机译：高分辨率透射电子显微镜（HRTEM）用于揭示由维氏压痕及其与未压痕硅基体的界面诱导的非晶硅的精细结构。观察到界面处的变形微孪晶和界面处从晶体的晶格结构到非晶结构的连续转变。在凹陷区域外围附近的非晶硅中，有许多簇，其特征是扭曲的硅晶格。提出了一种可能的机制，即在凹进的硅外围发生晶格畸变引起的非晶化。所有压痕均在环境温度下进行。

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《Journal of Materials Research》 |1999年第3期|682-687|共6页
作者
Y. Q. Wu; Y. B. Xu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
中图分类工程材料学;
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1. Transmission electron microscopy of amorphization and phase transformation beneath indents in Si [J] . Saka H., Shimatani A., Suganuma M., Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties . 2002,第10期

机译：硅压痕下非晶化和相变的透射电子显微镜
2. Transmission electron microscopy of amorphization and phase transformation beneath indents in Si [J] . Saka H., Shimatani A., Suganuma M., Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties . 2002,第10期

机译：硅压痕下非晶化和相变的透射电子显微镜
3. Photoluminescence in silicon implanted with silicon ions at amorphizing doses [J] . Sobolev N.A., Kalyadin A.E., Kyutt R.N., Semiconductors . 2011,第9期

机译：以非晶剂量注入硅离子的硅中的光致发光
4. Cross-sectional phase analysis of single crystalline silicon indented by RockweU indenter [C] . Sung-Soon Kim, Han-Seog Oh, Seong-Min Jeong Materials Research Society Symposium . 2002

机译：罗克威金压施加单晶硅的横截面相分析
5. A STUDY OF CRACKS AND DAMAGE IN SINGLE CRYSTAL SILICON AND GALLIUM-ARSENIDE INDENTED IN ELECTROLYTIC SOLUTIONS AND AT HIGH TEMPERATURE (SURFACE DEFORMATION, CHEMOMECHANICAL EFFECT). [D] . LEE, SOO WOHN. 1986

机译：研究了在电解溶液中和高温下（表面变形，化学机械效应）归因于单晶硅和砷化镓的裂纹和损伤。
6. Grain boundary resistance to amorphization of nanocrystalline silicon carbide [O] . Dong Chen, Fei Gao, Bo Liu -1

机译：纳米晶碳化硅的晶界抗非晶化性能
7. Packing fraction of crystalline structures of binary hard spheres : a general equation and application to amorphization. (doi:1 0.1103/PhysRevE.78.011303) [O] . Brouwers, HJH (Jos) Jos 2008

机译：二元硬球晶体结构的堆积分数：一个通用方程式及其在非晶化中的应用。（doi：1 0.1103 / PhysRevE.78.011303）
8. Studies on Amorphizing Silicon Using Silicon Ion Implantation [R] . Fernelius, N. C., Peterson, T. L., Ohmer, M. C., 1985

机译：硅离子注入对硅的非晶化研究

Lattice-distortion-induced amorphization in indented [110] silicon

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