Cross-sectional observation on the indentation of [001] silicon

Y. Q. Wu; G. Y. Shi; Y. B. Xu

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Cross-sectional observation on the indentation of [001] silicon

机译：[001]硅压痕的横截面观察

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A transmission electron microscope (TEM) micrograph of cross-sectionally viewed Vikers indentation made on the surface of (00l) silicon at ambient temperature was obtained. The picture clearly reveals a triangle area, pointing downward and having nondiffraction-contrast, left after unloading, which further confirms the amorphized range induced by indentation in silicon. Analysis of the picture directly manifests a significant recovery of indentation depth. Surface shape and range of the amorphous silicon region do not coincide with that of the indenter and the corresponding distribution pattern of hydrostatic stress beneath indentation predicted by elastoplastic theory, respectively. It seems that the amorphization could not be attributed to the result of hydrostatic stress alone.

机译：获得在室温下在（00l）硅的表面上制成的横截面观察到的维克斯压痕的透射电子显微镜（TEM）显微照片。图片清楚地显示出卸载后剩下的向下指向且无反差的三角形区域，这进一步证实了硅压痕引起的非晶化范围。图片的分析直接表明压痕深度的显着恢复。非晶硅区域的表面形状和范围分别与压头的表面形状和范围以及由弹塑性理论预测的压痕下的静水应力的相应分布模式不一致。看来非晶化不能仅归因于静水压力的结果。

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《Journal of Materials Research》 |1999年第6期|2399-2401|共3页
作者
Y. Q. Wu; G. Y. Shi; Y. B. Xu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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7. Electron microscopic observations of microcracking about indentations in aluminum oxide and silicone carbide [O] . B J Hockey, B R Lawn 1975

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Cross-sectional observation on the indentation of [001] silicon

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