...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Research >Solution deposition processing and electrical properties of Ba(Ti_1-xSn_x)O_3. thin films
【24h】

Solution deposition processing and electrical properties of Ba(Ti_1-xSn_x)O_3. thin films

机译：Ba（Ti_1-xSn_x）O_3的溶液沉积处理和电性能。薄膜

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Ba(Ti_1-xSn_x)O_3 (0 ≤ x ≤ 0.3) thin films were deposited on a platinized silicon substrate by a solution deposition process with methoxyethanol, water, and propylene glycol as solvents. Dielectric properties and current-voltage characteristics of the thin films were investigated in conjunction with phase evolution and microstructures by varying heating temperatures and Sn contents (x). Thin films annealed above 700 deg. C showed a pure perovskite phase with nanoscaled grains (20-30 nm). The dielectric constant of the thin films depended on the Sn content and showed a maximum value of 330 at x = 0. l5. The leakage current behavior of an optimum composition corresponding to x = 0.l5 was examined by correlating with charge transport mechanisms. Schottky emission was found to be predominant at voltages less than 6.8 V, and Fowler Nordheim tunneling appeared to be responsible above 6.8 V. The Schottky barrier of the Ba(Ti_0.85Sn_0.15)O_3-Pt interface was determined to be l .49 eV.
机译：Ba（Ti_1-xSn_x）O_3（0≤x≤0.3）薄膜通过以甲氧基乙醇，水和丙二醇为溶剂的溶液沉积工艺沉积在镀铂硅基板上。通过改变加热温度和Sn含量（x），结合相演化和微观结构研究了薄膜的介电性能和电流-电压特性。薄膜在700度以上退火。 C显示具有纳米级晶粒（20-30nm）的纯钙钛矿相。薄膜的介电常数取决于Sn含量，在x = 0. 15处显示最大值330。通过与电荷传输机制相关，检查了对应于x = 0.15的最佳成分的泄漏电流行为。发现在低于6.8 V的电压下，肖特基发射是主要的，而Fowler Nordheim隧穿似乎在6.8 V以上起作用。Ba（Ti_0.85Sn_0.15）O_3-Pt界面的肖特基势垒确定为l .49 eV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号