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首页> 外文期刊>Journal of Materials Research >Growth and ultraviolet optical properties of KGd_1-xRE_x(WO_4)_2 single crystals
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Growth and ultraviolet optical properties of KGd_1-xRE_x(WO_4)_2 single crystals

机译：KGd_1-xRE_x（WO_4）_2单晶的生长和紫外光学性质

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摘要

The suitable conditions for growth of KGd(WO_4)_2 and KGd_1-xRE_x(WO_4)_2- RE = Nd, Er, Yb, Ho, Tm, Plerby the top-seeded-solution-growth method, using K_2W_2O_7 as solvent, are discussed. The relation between crystal size, mean growth rate, distribution coefficient of the substituting element, and the presence of macrodefects is analyzed. The optical absorption corresponding tc the band-gap transition of KGW has been found to be temperature dependent; the absorption threshold energy changes from 34405 cm~-1' at 300 K to 35330 cm~-1 at 7 K. Narrow pre-edge absorption bands at about 32000 and 32600 cm~=1 have been ascribed to Gd~3+ intraconfigurational transitions. The photoluminescence of most RE~3+ ions has been observed under ultraviolet (UV) excitation close to the absorption threshold of KGW. This suggests the contribution of charge transfer bands. In Pr-doped samples the presence of a minor concentration of Pr~4+ could also contribute in this region. The irradiation with UV light does not introduce any significant coloration of our samples.
机译：讨论了使用K_2W_2O_7作为溶剂的顶部播种生长法生长KGd（WO_4）_2和KGd_1-xRE_x（WO_4）_2- RE = Nd，Er，Yb，Ho，Tm，Pler的合适条件。分析了晶体尺寸，平均生长速率，替代元素的分布系数和宏观缺陷的存在之间的关系。已经发现对应于KGW的带隙跃迁的光吸收与温度有关；吸收阈值能量从300 K时的34405 cm〜-1'变为7 K时的35330 cm〜-1。大约32000和32600 cm〜= 1处的窄的边缘吸收带归因于Gd〜3 +的构内转变。在接近KGW吸收阈值的紫外线（UV）激发下，已观察到大多数RE〜3 +离子的光致发光。这表明电荷转移带的贡献。在掺Pr的样品中，在该区域中也可能存在少量的Pr〜4 +。紫外线照射不会使我们的样品显色。

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