Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

Mikka Nishitani-Gamo; Isao Sakaguchi; Tomohide Takami

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Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

机译：通过温度控制化学气相沉积法生长的同质外延（111）金刚石

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We investigated the growth of high-quality homoepitaxial diamond on the (l l l) face in a microwave-assisted plasma chemical-vapor-deposition system incorpporating an individual substrate heating/cooling device. The grown diamond films were characterized by scanning electron microscopy, reflection high-energy electron diffraction, atomic force microscopy, confocal micro-Raman spectroscopy, and secondary ion mass spectrometry. The (l l l) diamond films show a tendency to incorporate a significant amount of hydrogen during chemical-vapor-deposition growth. Hydrogen incorporation degrades the crystal quality and surface smoothness. The amount of incorporated hydrogen decreases with the decrease in deposition temperature. We have shown that the crystal quality and surface smoothness of homoepitaxial diamond strongly depend on the substrate temperature. Independent control of the substrate temperature and incident microwave power is essential fOr high-quality diamond homoepitaxy.

机译：我们在结合了单个基板加热/冷却装置的微波辅助等离子体化学气相沉积系统中，研究了高品质同质外延金刚石在（111）面上的生长情况。通过扫描电子显微镜，反射高能电子衍射，原子力显微镜，共聚焦显微拉曼光谱和二次离子质谱法表征生长的金刚石膜。（111）金刚石膜显示出在化学气相沉积生长期间掺入大量氢的趋势。氢的引入降低了晶体的质量和表面光滑度。氢的引入量随着沉积温度的降低而降低。我们已经表明，同质外延金刚石的晶体质量和表面光滑度在很大程度上取决于基底温度。对于高质量的金刚石同质性，独立控制衬底温度和入射微波功率至关重要。

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来源
《Journal of Materials Research》 |1999年第9期|3518-3525|共8页
作者
Mikka Nishitani-Gamo; Isao Sakaguchi; Tomohide Takami;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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1. Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition [J] . Norio Tokuda, Masahiko Ogura, Satoshi Yamsaki, Japanese journal of applied physics . 2014,第4S期

机译：等离子增强化学气相沉积法制备同质外延金刚石（111）薄膜的各向异性横向生长
2. A Model Calculation of the Homoepitaxial Growth on Diamond (111) Surface by Chemical Vapor Deposition [J] . Takashi YANAGIHARA Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第1期

机译：化学气相沉积法在金刚石（111）表面上同质外延生长的模型计算
3. Effects of vicinal angles from (001) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method [J] . Kazuya Arima, Hidetaka Miyatake, Tokuyuki Teraji, Journal of Crystal Growth . 2007,第2期

机译：（001）表面的邻角对高功率微波等离子体化学气相沉积法生长的高质量同质外延金刚石膜硼掺杂特性的影响
4. Ultrapure Homoepitaxial Diamond Films Grown By Chemical Vapor Deposition [C] . T. Teraji Meeting of the Electrochemical Society . 2017

机译：通过化学气相沉积而生长的Ultrapure Homoepitaxial金刚石薄膜
5. Thermal plasma chemical vapor deposition (CVD) of polycrystalline and homoepitaxial diamond films. [D] . Lu, Zhipeng. 1991

机译：多晶和同质外延金刚石膜的热等离子体化学气相沉积（CVD）。
6. Data for direct chemical deposition of PbS on chemical vapor deposition grown-graphene for high performance photovoltaic infrared photo-detectors [O] . Emmanuel K Ampadu, Jungdong Kim, Eunsoon Oh, 2020

机译：PBS直接化学沉积对化学气相沉积的高性能光伏红外光探测器的数据
7. Ab initio thermodynamics of deposition growth: Surface terminations of TiC(111) and TiN(111) grown by chemical vapor deposition [O] . Rohrer, Jochen, Hyldgaard, Per 2010

机译：沉积生长的从头算热力学：通过化学气相沉积法生长的TiC（111）和TiN（111）的表面终止
8. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition [R] . 1997

机译：通过微波等离子体辅助化学气相沉积在高温下高生长率同质外延金刚石膜沉积

Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

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