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Influence of reaction time on growth of GaN nanowires fabricated by CVD method

机译:反应时间对CVD法制备的GaN纳米线生长的影响

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GaN nanowires have been fabricated successfully on Si (111) substrates coated with NiCl2 thin films by chemical vapor deposition method using Ga2O3 as raw material. The growth of GaN nanowires was investigated as a function of reaction times so as to study the influence of different durations on the components, microstructure, morphologies and optical properties of GaN samples in particular by X-ray diffraction, FT-IR spectrophotometer, scanning electron microscope, and photoluminescence. The results show that the samples after reaction are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after reaction at 1,100 °C for 60 min, which have good optical properties as revealed by PL spectra. Reaction time greatly influences the growth of GaN nanowires, that is, with the increase in reaction time, the crystalline quality of GaN nanowires is improved accordingly. The growth of the GaN nanowires follows the vapor–liquid-solid mechanism and Ni plays an important role as catalyst, which forms nucleation point in the growth of GaN nanowires.
机译:利用Ga 2 O 3 作为化学气相沉积方法,成功在涂覆有NiCl 2 薄膜的Si(111)衬底上成功制备了GaN纳米线。原材料。研究了GaN纳米线的生长随反应时间的变化,从而研究了不同持续时间对GaN样品的成分,微观结构,形貌和光学性能的影响,特别是通过X射线衍射,FT-IR分光光度计,扫描电子显微镜和光致发光。结果表明,反应后的样品为六方纤锌矿结构的单晶GaN,在1100℃下反应60min后得到的高质量晶体,PL光谱显示其具有良好的光学性能。反应时间极大地影响了GaN纳米线的生长,即随着反应时间的增加,GaN纳米线的晶体质量也相应提高。 GaN纳米线的生长遵循汽-液-固机理,Ni起催化剂的重要作用,在GaN纳米线的生长中形成成核点。

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