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首页> 外文期刊>Journal of Materials Science: Materials in Electronics >Doping effect of Mg2+ on BaTiO3-based metal–dielectric composite system
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Doping effect of Mg2+ on BaTiO3-based metal–dielectric composite system

机译:Mg 2 + 对BaTiO 3 基金属介电复合体系的掺杂作用

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摘要

The improvements of basic magnesium carbonate on the dielectric properties of metal–dielectric composite were researched. By means of SEM, EDS and XRD analytic manners, it can be concluded that Mg2+ replaced B-site (Ti4+) in BaTiO3 lattice, and make Ti enrich on the sample surface. With analysis on dielectric properties, it can be seen when the amount of Mg2+ is 0.9 mol%, the systematic dielectric constant is up to 11,395, the dielectric loss is less than 0.006, and the capacitance temperature percentage is less than ±10% between −55 and 150 °C.
机译:研究了碱性碳酸镁对金属-电介质复合材料介电性能的改善。通过SEM,EDS和XRD分析,可以得出结论,Mg 2 + 取代了BaTiO 3 中的B位(Ti 4 + 晶格,并使Ti在样品表面富集。通过介电性能分析,可以看出Mg 2 + 的含量为0.9 mol%,系统介电常数最高为11,395,介电损耗小于0.006,电容温度-55至150°C之间的百分比小于±10%。

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