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首页> 外文期刊>Journal of materials science >The point defects induced ferromagnetism in ZnO semiconductor by terbium doping via co-precipitation method
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The point defects induced ferromagnetism in ZnO semiconductor by terbium doping via co-precipitation method

机译：defects掺杂共沉淀法在ZnO半导体中点缺陷诱发铁磁性

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摘要

In this work, the undoped and terbium (Tb) doped ZnO nanoparticles were synthesized by a simple chemical co-precipitation method. X-ray diffraction patterns of the undoped and Tb doped ZnO exhibit the wurtzite hexagonal crystal structure, here the changing of crystallite size and unit cell volume is noticed with doping level. The anticipated elements in the synthesized samples are confirmed using energy dispersive X-rays analysis and X-ray photoelectron spectroscopy. The hexagonal wurtzite crystal structure of the synthesized materials is also confirmed from the µ-Raman study. From photoluminescence (PL) spectra, near band edge emission (NBE) peak of ZnO and defects related peaks intensities are increased by Tb doping. The red shift (NBE) observed in Tb doped ZnO samples as compared to undoped ZnO. The PL and micro-Raman results are strongly confirming the co-existing of oxygen vacancies (V~(O)) and zinc interstitials (Zn~(i)) defect sates in the Tb doped ZnO samples. So, the presence of these donor defect states (V~(O)and Zn~(i)) is main reason for the strong ferromagnetism in 0.09 mol% Tb doped ZnO.
机译：在这项工作中，通过简单的化学共沉淀法合成了未掺杂和and（Tb）掺杂的ZnO纳米颗粒。未掺杂和掺Tb的ZnO的X射线衍射图显示纤锌矿型六方晶体结构，在此，随着掺杂水平的提高，晶粒尺寸和晶胞体积发生了变化。使用能量色散X射线分析和X射线光电子能谱确认了合成样品中的预期元素。 µ-Raman研究也证实了合成材料的六方纤锌矿晶体结构。从光致发光（PL）光谱来看，ZnO的近带边缘发射（NBE）峰和与缺陷相关的峰强度通过Tb掺杂而增加。与未掺杂的ZnO相比，在掺Tb的ZnO样品中观察到红移（NBE）。 PL和显微拉曼光谱结果强烈证实了掺Tb的ZnO样品中氧空位（V〜（O））和锌间隙（Zn〜（i））缺陷状态的共存。因此，这些供体缺陷态（V〜（O）和Zn〜（i））的存在是0.09mol％Tb掺杂ZnO中强铁磁性的主要原因。

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