...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of materials science >Structural properties of InGaN/GaN/Al_2O_3 structure from reciprocal space mapping
【24h】

Structural properties of InGaN/GaN/Al_2O_3 structure from reciprocal space mapping

机译：从相互空间映射得出的InGaN / GaN / Al_2O_3结构的结构性质

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

By using metal organic chemical vapor deposition technique, InGaN/GaN solar cell (SC) structure is deposited over sapphire (Al~(2)O~(3)) wafer as GaN buffer and GaN epitaxial layers. Structural properties of InGaN/GaN/Al~(2)O~(3)SC structure is investigated by using high resolution X-ray diffraction technique dependent on In content. By using reciprocal space mapping, reciprocal space data are converted to w–θ data with a software. These w–θ data and full width at half maximum data are used for calculating lattice parameters. When compared with w–θ measurements in literature it is seen that especially a- lattice parameter is found very near to universal value from RSM. It is calculated as 3.2650 nm for sample A (S.A) GaN layer and 3.2570 nm for sample B (S.B) GaN layer on (105) asymmetric plane. Strain and stress calculations are made by using these lattice parameters. Strain and stress are calculated as 0.02363 and 8.6051 GPa for S.A GaN layer respectively. Other results are given in tables in the results and discussion section of this article. Edge, screw and mixed type dislocations are calculated as mosaic defects. All these calculations are made for two samples on (002) symmetric and (105) asymmetric planes. As a result it is seen that measurements by using RSM give more sensitive results. a- lattice parameter calculated with this technique is the best indicator of this result.
机译：通过使用金属有机化学气相沉积技术，将InGaN / GaN太阳能电池（SC）结构沉积在作为GaN缓冲层和GaN外延层的蓝宝石（Al〜（2）O〜（3））晶圆上。利用依赖于In含量的高分辨率X射线衍射技术研究了InGaN / GaN / Al〜（2）O〜（3）SC结构的结构性能。通过使用倒数空间映射，可以使用软件将倒数空间数据转换为w–θ数据。这些w–θ数据和半峰全宽数据用于计算晶格参数。当与文献中的w–θ测量值进行比较时，可以看出，特别是a晶格参数发现非常接近RSM的通用值。在（105）非对称面上，样品A（S.A）GaN层的计算值为3.2650 nm，样品B（S.B）GaN层的计算值为3.2570 nm。通过使用这些晶格参数进行应变和应力计算。 S.A GaN层的应变和应力分别计算为0.02363和8.6051GPa。其他结果在本文的“结果和讨论”部分的表中给出。边缘，螺钉和混合型位错计算为镶嵌缺陷。所有这些计算都是针对（002）对称和（105）非对称平面上的两个样本进行的。结果可以看出，使用RSM进行的测量给出了更为敏感的结果。用该技术计算出的晶格参数是该结果的最佳指示。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号