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首页> 外文期刊>Journal of materials science >The effect of post-process annealing on optical and electrical properties of mixed HfO_2-TiO_2 thin film coatings
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The effect of post-process annealing on optical and electrical properties of mixed HfO_2-TiO_2 thin film coatings

机译：后退火对混合HfO_2-TiO_2薄膜涂层光学和电学性能的影响

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摘要

In this paper a comparison of electrical and optical properties of mixed hafnium-titanium oxides is described. Thin films were deposited with the use of the magnetron co-sputtering method. For further analysis (Hf0.52Ti0.48)Ox and (Hf0.29Ti0.71)Ox coatings, which were amorphous directly after the deposition process, were chosen,. Moreover, post-process annealing was also performed in order to compare the electrical and optical properties of amorphous and nanocrystalline thin films with the same material composition. It was found that the phase transition from amorphous to orthorhombic HfTiO4 occurred in the case of (Hf0.52Ti0.48)Ox coating at 650 degrees C. In turn, the phase transition to TiO2-anatase was observed at the temperature of 600 degrees C in the case of (Hf0.29Ti0.71)Ox thin film. The leakage current for both amorphous coatings was in the range of 10(-7)-10(-8)A/cm(2). After additional annealing and phase transition, the leakage current slightly decreased for (Hf0.29Ti0.71)Ox thin film, while in the case of (Hf0.52Ti0.48)Ox sample the resistance switching effect was observed. The dielectric constant was equal to 24 and 25 for amorphous (Hf0.52Ti0.48)Ox and (Hf0.29Ti0.71)Ox films, respectively. However, after the phase transition it decreased to 15 for (Hf0.52Ti0.48)Ox and increased to 51 for (Hf0.29Ti0.71)Ox film. The results of optical studies showed that amorphous thin films were well transparent in a visible light range with an average transparency of ca. 85%. After the phase transition to HfTiO4-orthorhombic and TiO2-anatase, a slight decrease in the transparency level by 3% and a redshift of the cut-off wavelength was observed. Moreover, additional annealing caused small changes of the optical band gap energy, refractive index and extinction coefficient.
机译：在本文中，描述了混合的-钛氧化物的电学和光学性质的比较。使用磁控共溅射方法沉积薄膜。为了进一步分析，选择了（Hf0.52Ti0.48）Ox和（Hf0.29Ti0.71）Ox涂层，它们在沉积过程之后直接是非晶态的。此外，还进行了后处理退火，以比较具有相同材料成分的非晶和纳米晶体薄膜的电学和光学特性。发现在（Hf0.52Ti0.48）Ox涂层在650摄氏度的情况下发生了从无定形的HfTiO4到正交晶体的相变。反过来，在600摄氏度的温度下观察到了向TiO2-锐钛矿的相变。 （Hf0.29Ti0.71）Ox薄膜的情况。两种无定形涂层的泄漏电流都在10（-7）-10（-8）A / cm（2）的范围内。经过额外的退火和相变后，（Hf0.29Ti0.71）Ox薄膜的漏电流略有减少，而在（Hf0.52Ti0.48）Ox样品的情况下，观察到了电阻切换效果。对于非晶（Hf0.52Ti0.48）Ox和（Hf0.29Ti0.71）Ox薄膜，介电常数分别等于24和25。但是，在相变之后，对于（Hf0.52Ti0.48）Ox膜减少到15，对于（Hf0.29Ti0.71）Ox膜增加到51。光学研究的结果表明，无定形薄膜在可见光范围内具有很好的透明性，平均透明性约为。 85％。相转变为HfTiO4斜方晶和TiO2锐钛矿后，透明度水平略微降低了3％，并且截止波长出现了红移。此外，额外的退火导致光学带隙能量，折射率和消光系数的微小变化。

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  • 来源
    《Journal of materials science》 |2019年第7期|6358-6369|共12页
  • 作者

    Obstarczyk Agata; Kaczmarek Danuta; Mazur Michal; Wojcieszak Damian; Domaradzki Jaroslaw; Kotwica Tomasz; Morgiel Jerzy;

  • 作者单位

    Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland;

    Polish Acad Sci, Inst Met & Mat Sci, Reymonta 25, PL-30059 Krakow, Poland;

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