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首页> 外文期刊>Journal of materials science >Fabrication, characterization and electrochemical simulation of AIN-gate ISFET pH sensor
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Fabrication, characterization and electrochemical simulation of AIN-gate ISFET pH sensor

机译：AIN门ISFET pH传感器的制备，表征和电化学模拟

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摘要

This paper presents fabrication, characterization and modeling of aluminum nitride (AIN)-gate ion-sensitive field-effect transistor based pH sensor. The AIN sensing film is deposited using pulsed DC magnetron assisted reactive sputtering technique and the process optimization has been described. Material characterization was carried out for the deposited film by X-ray diffraction, field-emission scanning electron microscopy and energy dispersive spectroscopy and it was found that AlN film has polycrystalline structure. The fabricated device is tested in different pH buffer solutions (pH 4, 7 and 10) and a sensitivity of 33 mV/pH is obtained. A simulation program with integrated circuit emphasis (SPICE) macromodel was created by introducing electrochemical parameters in a metal-oxide field-effect transistor model for performing electrochemical simulations. We performed parametric sweep of electrochemical parameters to theoretically estimate the experimental results and we observed that the inclusion of amine sites in the SPICE macromodel is essential in determining precise sensor characteristics.
机译：本文介绍了基于pH传感器的氮化铝（AIN）门离子敏感场效应晶体管的制造，表征和建模。使用脉冲直流磁控管辅助反应溅射技术沉积AIN感测膜，并描述了工艺优化。通过X射线衍射，场发射扫描电子显微镜和能量色散光谱对沉积膜进行材料表征，发现AlN膜具有多晶结构。所制造的设备在不同的pH缓冲溶液（pH 4、7和10）中进行了测试，灵敏度为33 mV / pH。通过在金属氧化物场效应晶体管模型中引入电化学参数以执行电化学模拟，创建了具有集成电路重点（SPICE）宏模型的模拟程序。我们进行了电化学参数的参数扫描，以从理论上估算实验结果，并且我们观察到SPICE宏模型中包含胺位点对于确定精确的传感器特性至关重要。

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  • 来源
    《Journal of materials science》 |2019年第7期|7163-7174|共12页
  • 作者

    Sinha Soumendu; Mukhiya Ravindra; Sharma Rishi; Khanna P. K.; Khanna V. K.;

  • 作者单位

    Cent Elect Engn Res Inst, Smart Sensors Area, CSIR, Pilani 333031, Rajasthan, India|Acad Sci & Innovat Res, Ghaziabad 201002, India;

    Cent Elect Engn Res Inst, Smart Sensors Area, CSIR, Pilani 333031, Rajasthan, India|Acad Sci & Innovat Res, Ghaziabad 201002, India;

    Cent Elect Engn Res Inst, Smart Sensors Area, CSIR, Pilani 333031, Rajasthan, India|Acad Sci & Innovat Res, Ghaziabad 201002, India;

    Cent Elect Engn Res Inst, Smart Sensors Area, CSIR, Pilani 333031, Rajasthan, India|Acad Sci & Innovat Res, Ghaziabad 201002, India;

    Cent Elect Engn Res Inst, Smart Sensors Area, CSIR, Pilani 333031, Rajasthan, India|Acad Sci & Innovat Res, Ghaziabad 201002, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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