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首页> 外文期刊>Journal of materials science >Short-circuit current density and fill factor improvement by optimizing In_2O_3:H and metal back reflector layers for p-i-n a-SiGe:H thin film solar cells
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Short-circuit current density and fill factor improvement by optimizing In_2O_3:H and metal back reflector layers for p-i-n a-SiGe:H thin film solar cells

机译：通过优化p-i-n a-SiGe：H薄膜太阳能电池的In_2O_3：H和金属背反射层来提高短路电流密度和填充因子

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摘要

In this work, high efficiency p-i-n structure hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells were prepared via optimizing hydrogenated indium oxide In_2O_3:H (IOH) and silver/chromium/aluminum (Ag/Cr/Al) back reflector (BR) layers. Layer wise films including Al, Ag/Cr/Al and IOH/Ag/Cr/Al BR materials were fabricated into solar cells for improving short-circuit current density (J_(sc)) and fill factor (FF) which in turn enhanced output solar cell performance. Low resistivity, low carrier density and high mobility of IOH layers have been investigated with different water partial pressure (P_(H_2O)). J_(sc) was enhanced by 13.4% with IOH/Ag/Cr/Al BR structure due to their excellent optoelectronic properties compared to the initial solar cells with Al only. The spectral response of external quantum efficiency at long wavelengths of 550-900 nm was enhanced significantly by adding Ag and Cr with Al as composite electrode. A massive gain in J_(sc) of 1.13 mA/cm~2 was further improved by using optimal P_(H_2O) with IOH compared to the one without this layer. High efficiency of 9.27% for a-SiGe:H solar cell was successfully fabricated with a high J_(sc) of 18.40 ± 0.03 mA/cm~2 and FF of 69.48%.
机译：在这项工作中，通过优化氢化氧化铟In_2O_3：H（IOH）和银/铬/铝（Ag / Cr / Al）的背面，制备了高效pin结构氢化非晶硅锗（a-SiGe：H）薄膜太阳能电池反射层（BR）。将包括Al，Ag / Cr / Al和IOH / Ag / Cr / Al BR材料的分层薄膜制成太阳能电池，以提高短路电流密度（J_（sc））和填充因子（FF），从而提高输出功率太阳能电池性能。在不同的水分压（P_（H_2O））下，已研究了IOH层的低电阻率，低载流子密度和高迁移率。与初始的仅具有Al的太阳能电池相比，具有IOH / Ag / Cr / Al BR结构的I_ / sc / Al / BR结构可将J_（sc）提高13.4％。通过添加Ag和Cr和Al作为复合电极，可以显着增强550-900 nm长波长处的外部量子效率的光谱响应。与没有该层的情况相比，通过使用带有IOH的最佳P_（H_2O），可以进一步提高1.13 mA / cm〜2的J_（sc）的大增益。成功制造出a-SiGe：H太阳能电池9.27％的高效率，J_（sc）为18.40±0.03 mA / cm〜2，FF为69.48％。

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  • 来源
    《Journal of materials science》 |2019年第19期|17759-17764|共6页
  • 作者

    Xun Sun; Zhi Yang; Huey-Liang Hwang;

  • 作者单位

    Key Laboratory for Thin Film and Microfabrication of the Ministry of Education Department of Micro/Nano Electronics School of Electronics Information and Electrical Engineering Shanghai Jiao Tong University 800 Dongchuan Road Shanghai 200240 China;

    Key Laboratory for Thin Film and Microfabrication of the Ministry of Education Department of Micro/Nano Electronics School of Electronics Information and Electrical Engineering Shanghai Jiao Tong University 800 Dongchuan Road Shanghai 200240 China Centre for Nanotechnology Materials Science and Microsystems National Tsing Hua University No. 101 Section 2 Kuang-Fu Road Hsinchu 30013 Taiwan ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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