首页> 外文期刊>Journal of materials science >Effects of Sm_2O_3/SrO/LiF doping and cooling rate on sintering characteristics and microwave dielectric properties of (Zr_(0.8)Sn_(0.2))TiO_4 ceramics
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Effects of Sm_2O_3/SrO/LiF doping and cooling rate on sintering characteristics and microwave dielectric properties of (Zr_(0.8)Sn_(0.2))TiO_4 ceramics

机译:Sm_2O_3 / SrO / LiF的掺杂和冷却速率对(Zr_(0.8)Sn_(0.2))TiO_4陶瓷烧结特性和微波介电性能的影响

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摘要

The present study aims to synthesize (Zr_(0.8)Sn_(0.2))TiO_4 (ZST) ceramics and determine the optimum content of Sm_2O_3/SrO/ LiF doping and cooling rate to improve processing and microwave dielectric properties of the ceramics. The initial content of three additives was preliminarily determined by analyzing the phase composition, microstructure, sintering characteristics and microwave dielectric performance of ZST ceramics samples. As a typical fluxing agent, the optimum LiF content was further explored, and the effects of different LiF contents on 0.8 wt% Sm_2O_3 +0.4 wt% SrO doped ceramics were investigated. A suitable amount of liquid phase could be formed at a lower temperature when adding suitable LiF content into ceramics. The results showed the 0.3 wt% LiF not only promoted densification process but also reduced the sintering temperature to 1285 ℃, which made the dielectric properties better. Moreover, the cooling rate also affected the performance of ZST ceramics, and the optimum cooling rate was determined through analyzing the lattice parameters and microstructure. Comparing the comprehensive properties of various ZST ceramics doped with 0.8 wt% Sm_2O_3 + 0.4 wt% SrO+ 0.3 wt% LiF, the ceramic exhibited the densest microstructure and the best dielectric performance where ε_r = 39.66, Q × f =45,150 GHz (f=5.6 GHz), and τ_f = — 4.88 ppm/℃ when the cooling rate was 1 ℃/min and the sintering temperature was 1285 ℃.
机译:本研究旨在合成(Zr_(0.8)Sn_(0.2))TiO_4(ZST)陶瓷,并确定Sm_2O_3 / SrO / LiF掺杂和冷却速率的最佳含量,以改善陶瓷的加工和微波介电性能。通过分析ZST陶瓷样品的相组成,微观结构,烧结特性和微波介电性能,初步确定了三种添加剂的初始含量。作为典型的助熔剂,进一步探讨了最佳的LiF含量,并研究了不同LiF含量对0.8 wt%Sm_2O_3 +0.4 wt%SrO掺杂陶瓷的影响。当向陶瓷中添加适当的LiF含量时,可以在较低的温度下形成适当量的液相。结果表明,0.3 wt%LiF不仅促进了致密化过程,而且将烧结温度降低至1285℃,从而使介电性能更好。此外,冷却速度也影响ZST陶瓷的性能,并通过分析晶格参数和微观结构来确定最佳冷却速度。比较各种掺杂0.8 wt%Sm_2O_3 + 0.4 wt%SrO + 0.3 wt%LiF的ZST陶瓷的综合性能,该陶瓷表现出最致密的微观结构和最佳介电性能,其中ε_r= 39.66,Q×f = 45,150 GHz(f = 5.6 GHz),并且当冷却速率为1℃/ min和烧结温度为1285℃时τ_f=-4.88 ppm /℃。

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  • 来源
    《Journal of materials science》 |2019年第20期|18818-18827|共10页
  • 作者单位

    College of Materials Science and Engineering Nanjing Tech University Nanjing 210009 China Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites Nanjing 210009 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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