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High-efficiency c-Si based interdigitated point contact back heterojunction solar cells

机译：高效基于c-Si的叉指点接触背异质结太阳能电池

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摘要

We report on the modeling and performance optimization studies of point contact back heterojunction (BHJ) solar cells. BHJ solar cell technology is a combination of front heterojunction (a-Si:H/c-Si) solar cell technology and interdigitated back junction c-Si solar cell technology. In this work, both emitter (p~+-a-Si:H) and back surface field (BSF, n~+-a-Si:H) were formed at the rear side as an array of interdigitated points, where their respective contacts formed an interdigitated pattern. The gap between p-type and n-type contact fingers was fixed at 10 μm. The n~+-a-Si:H (i.e. BSF) circular diameter was fixed while emitter size was varied, and vice versa. Simulation was also performed with and without passivation layer underneath emitter and BSF. We also investigated the impact of surface texture size on cell efficiency. By varying surface texture size, viz. pyramid height and base width, an efficiency as high as 26.61% was obtained with 761 mV V_(OC), 41 mA/cm~2 J_(sc), and 84.5% FF for a small pyramid structure with 2 μm height and 4 μm base width.
机译：我们报告点接触背异质结（BHJ）太阳能电池的建模和性能优化研究。 BHJ太阳能电池技术是前异质结（a-Si：H / c-Si）太阳能电池技术和叉指背结c-Si太阳能电池技术的结合。在这项工作中，发射器（p〜+ -a-Si：H）和背面场（BSF，n〜+ -a-Si：H）都在背面形成为叉指点阵列，它们各自接触形成了一个交叉指状的图案。 p型和n型接触指之间的间隙固定为10μm。当发射体尺寸变化时，n〜+ a-Si：H（即BSF）圆直径是固定的，反之亦然。在发射极和BSF下方有钝化层的情况下也进行了仿真。我们还研究了表面纹理尺寸对电池效率的影响。通过改变表面纹理的大小，即。金字塔高度和基极宽度，对于高度为2μm和4μm的小型金字塔结构，在761 mV V_（OC），41 mA / cm〜2 J_（sc）和FF为84.5％FF时，效率高达26.61％基本宽度。

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  • 来源
    《Journal of materials science》 |2017年第13期|9697-9703|共7页
  • 作者

    R. Jeyakumar; T. K. Maiti; Mahmoud M. Khader; Nikesh Kandasamy; Amit Verma; Reza NekoveisJ. Kumar; Nagarajan Balaji; Junsin Yi;

  • 作者单位

    CSIR-National Physical Laboratory, Physics of Energy Harvesting Division, New Delhi 110012, India,Affiliate Faculty in the Department of Electrical Engineering, Texas A&M University - Kingsville, 700 University Blvd, Kingsville, TX 78363, USA;

    Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada,Present Address: Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima City P.C.7398530, Japan;

    Gas Processing Center, College of Engineering, Qatar University, Doha, P.O. 2713, Qatar;

    Department of Electrical and Electronics Engineering, Rajalakshmi Engineering College (Anna University), Chennai 602105, India;

    Department of Electrical Engineering, Texas A&M University - Kingsville, 700 University Blvd, Kingsville, TX 78363, USA;

    Crystal Growth Centre, Anna University, Chennai 600025, India;

    Department of Energy Science, Sungkyunkwan University, Suwon 440-746, South Korea;

    School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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