Optimization of Zn(O,S)/(Zn,Mg)O buffer layer in Cu(In,Ga)Se_2 based photovoltaic cells

M. Saadat; M. Moradi; M. Zahedifar

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Optimization of Zn(O,S)/(Zn,Mg)O buffer layer in Cu(In,Ga)Se_2 based photovoltaic cells

机译：Cu（In，Ga）Se_2基光伏电池中Zn（O，S）/（Zn，Mg）O缓冲层的优化

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Device modeling of CIGS based thin film solar cell with Zn(O,S)/(Zn,Mg)O buffer layer was simulated in order to find the optimum ratios of magnesium in (Zn_(1-x),Mg_x)O and oxygen in Zn(O_y,S_(1-y)) which led to the optimized values of x = 0.1-0.25 and y = 0.5-0.6. When the oxygen content of Zn(O,S) was lower than 30 %, the recombination at Zn(O,S)/CIGS interface became prominent and J_(sc) was severely limited. It was found that the V_(oc) is approximately independent of magnesium content in (Zn,Mg)O and oxygen content in Zn(O,S) layers, and the efficiency is highly affected by the fill factor. Also studied were the effect of thicknesses of (Zn,Mg)O and Zn(O,S) layers while the x and y were set at x = 0.2 and y = 0.6. Our simulations show that the optimum range for thickness of the (Zn,Mg)O layer is from 70 to 100 nm, while it is 20-30 nm for the Zn(O,S) layer.

机译：模拟了具有Zn（O，S）/（Zn，Mg）O缓冲层的CIGS薄膜太阳能电池的器件建模，以找到（Zn_（1-x），Mg_x）O和氧气中镁的最佳比例Zn（O_y，S_（1-y））中的x导致优化值x = 0.1-0.25和y = 0.5-0.6。当Zn（O，S）的氧含量低于30％时，在Zn（O，S）/ CIGS界面的复合变得显着，并且J_（sc）受到严重限制。发现V_（oc）大约与（Zn，Mg）O中的镁含量和Zn（O，S）层中的氧含量无关，并且效率受填充因子的影响很大。还研究了x和y设置为x = 0.2和y = 0.6时（Zn，Mg）O和Zn（O，S）层厚度的影响。我们的模拟表明（Zn，Mg）O层的最佳厚度范围是70至100 nm，而Zn（O，S）层的最佳范围是20-30 nm。

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来源
《Journal of materials science》 |2016年第2期|1130-1133|共4页
作者
M. Saadat; M. Moradi; M. Zahedifar;
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作者单位

Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317, Iran;

Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317, Iran;

Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317, Iran,Physics Department, University of Kashan, Kashan 87317, Iran;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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机译：薄膜基于Cu（In，Ga）（S，Se）2的太阳能电池中的Zn（S，O，OH）/ ZnMgO缓冲液第一部分：Zn（S，O，OH）缓冲层的快速化学浴沉积共蒸发Cu（In，Ga）Se_2和电沉积CuIn（S，Se）_2太阳能电池的工业应用
2. The Zn(S,O,OH)/ZnMgO Buffer in Thin Film Cu(In,Ga)(S,Se)2-Based Solar Cells Part I: Fast Chemical Bath Deposition of Zn(S,O,OH) Buffer Layers for Industrial Application on Co-evaporated Cu(In, Ga)Se_2 and Electrodeposited CuIn(S,Se)_2 Solar Cells [J] . C. Hubert, N. Naghavi, O. Roussel Progress in photovoltaics . 2009,第7期

机译：薄膜基于Cu（In，Ga）（S，Se）2的太阳能电池中的Zn（S，O，OH）/ ZnMgO缓冲液第一部分：Zn（S，O，OH）缓冲层的快速化学浴沉积共蒸发Cu（In，Ga）Se_2和电沉积CuIn（S，Se）_2太阳能电池的工业应用
3. Optimization of ALD-(Zn,Mg)O buffer layers and (Zn,Mg)O/Cu(In,Ga)Se_2 interfaces for thin film solar cells [J] . C. Platzer-Bjoerkman, T. Toerndahl, A. Hultqvist, Thin Solid Films . 2007,第15期

机译：薄膜太阳能电池ALD-（Zn，Mg）O缓冲层和（Zn，Mg）O / Cu（In，Ga）Se_2界面的优化
4. Optimization studies of chemical bath deposition of Zn(S,O,OH) Buffer Layers for Large Area Co-evaporated Cu(In,Ga)Se_2 (CIGS) and Electrodeposited CuIn(S,Se)_2 (CIS) Solar Cells [C] . N. Naghavi, C. Hubert, O. Kerrec, European photovoltaic solar energy conference . 2007

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5. Energy Band Alignment at Grain Boundaries and Its Effects on the Photovoltaic Performance in Cu(In,Ga)Se2, Cu2ZnSn(S,Se) 4 and Perovskite Thin Films [D] . Ma, Yaping. 2017

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6. Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO [O] . Yulia Ievskaya, Robert L. Z. Hoye, Aditya Sadhanala, 2016

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机译：薄膜Cu（IN，Ga）（Se，S）2的太阳能电池的Zn（S，O，OH）/ ZnMgo缓冲液部分II：ZnMGO缓冲层的磁控溅射，用于在线共蒸发的Cu （在，Ga）Se2solar细胞

Optimization of Zn(O,S)/(Zn,Mg)O buffer layer in Cu(In,Ga)Se_2 based photovoltaic cells

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