Effect of film thickness and annealing on optical properties of TiO_2 thin films and electrical characterization of MOS capacitors

M. Vishwas; K. Narasimha Rao; R. P. S. Chakradhar; Ashok M. Raichur

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Effect of film thickness and annealing on optical properties of TiO_2 thin films and electrical characterization of MOS capacitors

机译：膜厚和退火对TiO_2薄膜光学性能和MOS电容器电学特性的影响

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Titanium dioxide (TiO_2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO_2 films was studied. TiO_2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (Ⅰ-Ⅴ) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

机译：通过溶胶-凝胶法将二氧化钛（TiO_2）薄膜沉积在玻璃和硅（100）衬底上。研究了薄膜厚度和退火温度对TiO_2薄膜透光率/反射率的影响。 TiO_2薄膜用于制造金属氧化物半导体电容器。研究了不同退火温度下的电容-电压（C-V），耗散电压（D-V）和电流-电压（Ⅰ-Ⅴ）特性，并估算了介电常数，电流密度和电阻率。损耗角正切（耗散）随着退火温度的升高而增加。

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来源
《Journal of materials science》 |2014年第10期|4495-4500|共6页
作者
M. Vishwas; K. Narasimha Rao; R. P. S. Chakradhar; Ashok M. Raichur;
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作者单位

Post Graduate Department of Physics, Government Science College, Bangalore 560001, India;

Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India;

CSIR-NAL, Bangalore 560017, India;

Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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Effect of film thickness and annealing on optical properties of TiO_2 thin films and electrical characterization of MOS capacitors

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