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首页> 外文期刊>Journal of materials science >The effects of solder deformation on the wetting characteristics and interfacial reaction of Sn-3.5Ag solders on Cu substrates in fluxless soldering
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The effects of solder deformation on the wetting characteristics and interfacial reaction of Sn-3.5Ag solders on Cu substrates in fluxless soldering

机译：助焊剂变形对无助焊剂中Sn-3.5Ag焊料在Cu基体上的润湿特性和界面反应的影响

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摘要

The effects of solder deformation on the wetting characteristics during fluxless soldering were studied when deformed Sn-3.5Ag solder balls were reacted with Cu or oxidized Cu substrates. The Cu surfaces were oxidized at 100 ℃ for 2 or 4 h in air. After the 760 μm diameter solder balls were deformed on the substrates under 0-30 N, they were then reflowed at 300 ℃ for 30 s without flux. An optical microscope and a scanning electron microscope equipped with energy dispersive spec-troscopy were used to measure the wetting angles and to characterize interfacial microstructures. As solder deformation increased, the wetting angle of solder bumps on the Cu or oxidized Cu substrates decreased and the spreading area increased. The oxide layer on the Cu surface decreased the wettability of the solders. Intermetallic compound (IMC) growth was suppressed in the solder interface when the solder reacted with oxidized Cu, while the IMC thickness increased with solder deformation. Solder deformation exposed a fresh Sn surface and improved contact between the solder and Cu substrate, thereby increasing the wettability of the solders.
机译：研究了变形的Sn-3.5Ag锡球与Cu或氧化的Cu基板反应时，焊料变形对无助焊过程中润湿特性的影响。铜表面在空气中于100℃氧化2或4 h。直径760μm的焊球在0-30 N下在基板上变形后，将其在300℃下回流30 s，无助熔剂。使用配备有能量色散光谱学的光学显微镜和扫描电子显微镜来测量润湿角并表征界面微观结构。随着焊料变形的增加，Cu或氧化的Cu衬底上的焊料凸点的润湿角减小，并且散布面积增大。 Cu表面上的氧化物层降低了焊料的润湿性。当焊料与氧化的铜反应时，金属间化合物（IMC）的生长在焊料界面受到抑制，而IMC厚度则随着焊料变形而增加。焊锡变形会暴露出新的Sn表面，并改善了焊料与Cu基材之间的接触，从而提高了焊料的润湿性。

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  • 来源
    《Journal of materials science》 |2013年第9期|3255-3261|共7页
  • 作者

    Jeong Hwan Lee; Sung Woo Ma; Young Min Kim; Jin Su Lee; Ki Bum Kim; Jae Myun Kim; Jae Sung Oh; Namseog Kim; Young-Ho Kim;

  • 作者单位

    Division of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea;

    Division of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea;

    SK Hynix Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, South Korea;

    SK Hynix Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, South Korea;

    SK Hynix Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, South Korea;

    SK Hynix Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, South Korea;

    SK Hynix Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, South Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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