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首页> 外文期刊>Journal of materials science >Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors
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Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors

机译:铝掺杂对基于ZPCCY的压敏电阻的微观结构,电性能,介电特性和老化行为的影响

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摘要

The Al doping effect on the microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors was investigated in the range of 0.0-0.1 mol%. The breakdown electric field in the E-J characteristics decreased in a wide range from 4,921 to 475 V/cm with increasing amounts of Al_2O_3. The nonlinear properties were improved by increasing amounts of Al_2O_3 up to 0.005 mol%, whereas the further additions caused it to decrease. The highest nonlinear coefficient (α = 45.2) was obtained when Al_2O_3 concentration is 0.005 mol%. The Al_2O_3 acted as a donor due to the increase of electron concentration in the small range of 0.0-0.1 mol%. On the other hand, an appropriate addition of Al_2O_3 in the range of 0.001-0.005 mol% was found to significantly improve the electrical stability against DC accelerated aging stress.
机译:在0.0-0.1mol%的范围内研究了Al掺杂对ZPCCY基压敏电阻的微观结构,电性能,介电特性和老化行为的影响。随着Al_2O_3含量的增加,E-J特性的击穿电场在4,921至475 V / cm的宽范围内下降。通过增加Al_2O_3的量至0.005 mol%,改善了非线性性能,而进一步的添加导致其降低。当Al_2O_3浓度为0.005 mol%时,可获得最高的非线性系数(α= 45.2)。由于在0.0-0.1mol%的小范围内电子浓度的增加,Al_2O_3用作施主。另一方面,发现在0.001-0.005mol%的范围内适当添加Al_2O_3可显着改善抵抗DC加速老化应力的电稳定性。

著录项

  • 来源
    《Journal of materials science》 |2009年第8期|718-726|共9页
  • 作者

    Choon-W. Nahm;

  • 作者单位

    Department of Electrical Engineering, Dongeui University, Busan 614-714, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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