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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Dependence of Cu/In ratio of structural and electrical characterization of CuInS_2 crystal
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Dependence of Cu/In ratio of structural and electrical characterization of CuInS_2 crystal

机译:Cu / In比对CuInS_2晶体结构和电学特性的影响

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摘要

CuInS_2 crystals were successfully grown by the Hot-Press method at 700℃ for 1 h under high pressure in Cu-rich region. The In-rich samples were found to contain a small amount of secondary phase (CuIn_5S_8). Crystalline grain sizes in the In-rich region increased with increasing Cu/In ratio, whereas they remained constant in the Cu-rich region. All samples exhibited a low Sulfur concentration. This indicated that Cu atoms on In sites and In interstitials, and/or S vacancies might lead to an enhancement in electrical conductivity in both p- and n-type material.
机译:在富Cu区,通过高压热压法在700℃下成功生长了1h的CuInS_2晶体。发现富In的样品包含少量的次级相(CuIn_5S_8)。富In区的晶粒尺寸随Cu / In比的增加而增加,而在富Cu区的晶粒尺寸保持不变。所有样品均显示出低硫浓度。这表明In位点和In间隙和/或S空位上的Cu原子可能导致p型和n型材料的电导率提高。

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