Cathodoluminescence study of GaN-based film structures

D. S. Jiang; U. Jahn; J. Chen; D. Y. Li; S. M. Zhang; J. J. Zhu; D. G. Zhao; Z. S. Liu; H. Yang; K. Ploog

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Cathodoluminescence study of GaN-based film structures

机译：GaN基薄膜结构的阴极发光研究

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摘要

GaN films grown on sapphire substrate with an emphasis on epitaxial lateral overgrown (ELOG) layers with an array of rhombic shaped mask area as well as InGaN/GaN MQW laser diode layer structures were investigated by cathodoluminescence (CL) spectroscopy and CL imaging at room and low temperatures. The microscopic imaging with a high-spatial resolution clearly reveals the distribution of threading dislocations and point defects in ELOG GaN films. The secondary electron and CL data measured on cleaved faces of laser diodes are analyzed in consideration with luminescence mechanisms in semiconductor heterostructures and around the p-n junction, providing important information on the defects and carrier dynamics in laser diode devices.

机译：通过阴极发光（CL）光谱和室内CL成像研究了在蓝宝石衬底上生长的GaN膜，重点是带有菱形掩模区域阵列的外延横向过生长（ELOG）层以及InGaN / GaN MQW激光二极管层结构。低温。具有高空间分辨率的显微成像清楚地揭示了ELOG GaN膜中的螺纹位错和点缺陷的分布。考虑到半导体异质结构中和p-n结周围的发光机理，分析了在激光二极管劈开面上测得的二次电子和CL数据，从而提供了有关激光二极管器件中的缺陷和载流子动力学的重要信息。

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来源
《Journal of materials science》 |2008年第1期|58-63|共6页
作者
D. S. Jiang; U. Jahn; J. Chen; D. Y. Li; S. M. Zhang; J. J. Zhu; D. G. Zhao; Z. S. Liu; H. Yang; K. Ploog;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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关键词
cathodoluminescence (CL); metalorganic chemical vapor deposition (MOCVD); GaN-based laser diodes; dislocation;

机译：阴极发光（CL）;金属有机化学气相沉积（MOCVD）;GaN基激光二极管;错位;

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Cathodoluminescence study of GaN-based film structures

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