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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >The crystallographic properties of strained silicon measured by X-ray diffraction
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The crystallographic properties of strained silicon measured by X-ray diffraction

机译：用X射线衍射测量应变硅的晶体学性质

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摘要

Strained silicon represents a materials-based enhancement to further scaling of CMOS transistors. In epitaxial strained silicon substrates, strain is provided by a relaxed SiGe graded buffer layer that expands the in-plane lattice constant of silicon. Because this is accompanied by the introduction of crystalline defects, in the form of dislocations, mosaic structure, and lattice tilting, the deposition of strained silicon occurs on imperfect substrates. Therefore, there is a fundamental need to study the materials properties to ensure strained silicon substrates meet the rigorous criteria for CMOS processing. This paper focuses on the in-depth investigation of the crystallographic properties of epitaxial strained silicon and strained silicon on insulator (SSOI) substrates by X-ray diffraction (XRD). The results for both epitaxial strained silicon and bonded SSOI substrates are presented and contrasted, with particular emphasis on the effect of the layer transfer process used during the formation of SSOI substrates. Although the focus is on strained silicon, the X-ray diffraction techniques highlighted in this paper are readily extendable to other materials heterostructures, such as germanium on insulator, strained germanium, and III-V compound semiconductors on insulator, allowing characterization of many future microelectronic platforms.
机译：应变硅代表了基于材料的增强，可以进一步缩小CMOS晶体管的尺寸。在外延应变硅衬底中，应变由松弛的SiGe梯度缓冲层提供，该缓冲层扩展了硅的面内晶格常数。因为这伴随着以位错，镶嵌结构和晶格倾斜的形式引入晶体缺陷，所以应变硅的沉积会在不完美的基板上发生。因此，根本需要研究材料特性，以确保应变硅衬底满足CMOS处理的严格标准。本文致力于通过X射线衍射（XRD）深入研究外延应变硅和绝缘体（SSOI）衬底上应变硅的晶体学性质。给出并对比了外延应变硅和键合SSOI衬底的结果，特别强调了在SSOI衬底形成过程中使用的层转移工艺的效果。尽管重点是应变硅，但本文重点介绍的X射线衍射技术可轻松扩展到其他材料异质结构，例如绝缘体上的锗，应变锗和绝缘体上的III-V化合物半导体，从而可以表征许多未来的微电子平台。

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