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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Synthesis, structure, and field emission properties of sulfur-doped nanocrystalline diamond
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Synthesis, structure, and field emission properties of sulfur-doped nanocrystalline diamond

机译：硫掺杂纳米晶金刚石的合成，结构和场发射特性

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摘要

The synthesis and properties of sulfur-doped nanocrystalline diamond films were investigated. The films were deposited by hot-filament chemical vapor deposition on Mo substrates using methane, hydrogen, and hydrogen disulfide. The nanocrystalline nature of the material arises from the induction of continuous secondary nucleation in the chemical vapor deposition environment. Complementary characterization tools were employed in order to obtain a comprehensive and coherent understanding of the correlations between the structural and electronic properties. In particular, sulfur-doped nanocrystalline diamond films show n-type Hall conductivity, enhanced field emission properties, and insensitivity to ion radiation. It was found that n-type doping of the tetragonally-bonded carbon matrix together with a nano network of trigonally-bonded carbon are crucial elements for enhanced field emission from nanocrystalline diamond. These conclusions and the corresponding supporting evidence are discussed.
机译：研究了掺硫纳米晶金刚石薄膜的合成与性能。使用甲烷，氢气和二硫化氢通过热丝化学气相沉积将薄膜沉积在Mo基板上。该材料的纳米晶体性质来自于化学气相沉积环境中连续二次成核的诱导。为了获得对结构和电子特性之间关系的全面而连贯的理解，使用了互补的表征工具。特别地，掺杂硫的纳米晶金刚石膜显示出n型霍尔电导率，增强的场发射特性以及对离子辐射的不敏感性。发现四方键合碳基体的n型掺杂与三方键合碳的纳米网络是增强纳米晶金刚石场发射的关键元素。这些结论和相应的支持证据进行了讨论。

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