High-k gate oxide for silicon heterostructure MOSFET devices

S. K. Ray; R. Mahapatra; S. Maikap

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High-k gate oxide for silicon heterostructure MOSFET devices

机译：硅异质结MOSFET器件的高k栅极氧化物

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Very exciting and promising results from recent developments in group-IV alloy heterostructures (viz., SiGe, SiGeC, SiC, GeC and strained-Si) have led to the belief that SiGe-based devices will open up an entirely new dimension to the future of VLSI/ULSI technology. The growth of ultrathin dielectric films on a strained group-IV alloy layer is a challenging task. As metal-oxide-semiconductor devices are being aggressively scaled down, high permittivity dielectrics are being widely investigated as alternative gate insulating layers in advanced MOS devices. The present paper reviews the recent results of different gate and high-k dielectrics on group-IV alloy layers for scaled CMOS devices, high-mobility pure-Ge channel devices and nanocrystal floating gate memories.

机译：第四族合金异质结构（即SiGe，SiGeC，SiC，GeC和应变Si）的最新发展非常令人振奋和令人鼓舞的结果，使人们相信基于SiGe的器件将为未来打开一个全新的维度VLSI / ULSI技术。在应变IV族合金层上生长超薄介电膜是一项艰巨的任务。随着金属氧化物半导体器件的规模不断缩小，高介电常数的电介质正在作为高级MOS器件中的替代栅绝缘层得到广泛研究。本文综述了在规模化CMOS器件，高迁移率纯Ge沟道器件和纳米晶体浮栅存储器的IV组合金层上不同的栅极和高k电介质的最新结果。

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来源
《Journal of Materials Science. Materials in Electronics》 |2006年第9期|p.689-710|共22页
作者
S. K. Ray; R. Mahapatra; S. Maikap;
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作者单位

Department of Physics and Meteorology, IIT, Kharagpur 721302, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类计量学;
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机译：采用SiCl_4化学工艺的干法刻蚀质量高的Ga_xGd_yO_z栅极氧化物，可在制造III-V MOSFET时实现低电阻欧姆接触
2. Dry etching of a device quality high-k Ga_xGd_yO_z gate oxide in CH_4/H_2-O_2 chemistry for the fabrication of Ⅲ-Ⅴ MOSFETs [J] . X. Li, H. Zhou, R.J.W. Hill, Microelectronic Engineering . 2007,第5a8期

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3. Analog/RF Performance Investigation of Nanoscale Gate-Underlap Single and Double Gate Silicon-On-Insulator MOSFETs with High-k Stack on Spacer [J] . Singh Indra Vijay, Alam M. S. Journal of Nanoelectronics and Optoelectronics . 2015,第6期

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4. Alternate gate oxides for silicon MOSFETs using high-K dielectrics [C] . C. A. Billman, P. H. Tan, K. J. Hubbard, Symposium on ultrathin SiO2 and High-K materials for ULSI gate dielectrics . 1999

机译：使用高k电介质的硅MOSFET的替代栅极氧化物
5. Technology development and study of rapid thermal CVD high-k gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration: Zirconium oxide, and hafnium oxide. [D] . Lee, Choong-Ho. 2003

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High-k gate oxide for silicon heterostructure MOSFET devices

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