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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Electrical studies of semiconductor-dielectric interfaces
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Electrical studies of semiconductor-dielectric interfaces

机译：半导体-介电界面的电气研究

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摘要

In this paper, a review of the physical properties and characterization techniques of semiconductor-dielectric interfaces, and also of the dielectrics is presented. A good interface between the semiconductor and the dielectric with low defect density as well as a high-quality dielectric are critical for the performance characteristics of metal-oxide-semiconductor (MOS) transistors. While this paper is focused on silicon-silicon dioxide systems, other interfaces with novel gate dielectrics are also discussed. The main experimental techniques that are used to obtain the density of interface states and related parameters such as capture cross sections are described, and their advantages and disadvantages are discussed. The adaptation of these techniques to interfaces with novel dielectrics is also discussed. Finally, a discussion of some experimental techniques used to study the physical properties of dielectrics is presented.
机译：在本文中，对半导体-电介质界面的物理性质和表征技术以及电介质进行了综述。半导体与低缺陷密度的电介质之间的良好界面以及高质量的电介质对于金属氧化物半导体（MOS）晶体管的性能特性至关重要。尽管本文着重于硅-二氧化硅系统，但也讨论了具有新型栅极电介质的其他界面。描述了用于获取界面态密度和相关参数（例如捕获截面）密度的主要实验技术，并讨论了它们的优缺点。还讨论了这些技术对与新型电介质的界面的适应性。最后，讨论了一些用于研究电介质物理特性的实验技术。

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