Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

Erik V. Johnson; Nazir P. Kherani; Stefan Zukotynski

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Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

机译：利用生长表面电偏压对SF-PECVD生长的氢化微晶硅薄膜进行拉曼散射表征

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A series of hydrogenated microcrystalline films were grown by a novel thin film deposition method using the Saddle Field Plasma Enhanced Chemical Vapour Deposition system. We show that the surface potential during growth strongly affects the microcrys-talline character of the films, as quantified by Raman scattering. This effect can be reproduced on both conductive and non-conductive substrates. Films grown close to the threshold for microcrystalline growth exhibit laser-induced crystallization at low laser intensities.

机译：通过使用鞍场等离子体增强化学气相沉积系统的新型薄膜沉积方法，生长了一系列氢化的微晶膜。我们表明，通过拉曼散射定量，在生长过程中的表面电势会严重影响薄膜的微晶-talline特性。可以在导电和非导电基板上均再现这种效果。生长成接近微晶生长阈值的薄膜在低激光强度下会显示出激光诱导的结晶。

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来源
《Journal of Materials Science. Materials in Electronics》 |2006年第10期|p.801-813|共13页
作者
Erik V. Johnson; Nazir P. Kherani; Stefan Zukotynski;
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作者单位

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类计量学;
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1. Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias [J] . Erik V. Johnson, Sjoerd Hoogland, Ethan Klem, Journal of Materials Science. Materials in Electronics . 2006,第10期

机译：具有生长表面电偏压的SF-PECVD生长的氢化微晶硅的物理，电和光学性质
2. Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics [J] . Johnson EV, Kroely L, Cabarrocas PRI Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2009,第10期

机译：用于薄膜光伏的氢化微晶硅中SiH键拉伸模式的拉曼散射分析
3. Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy [J] . Paillard V., Puech P., Cabarrocas PRI. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta1期

机译：使用拉曼光谱法测量氢化微晶硅薄膜中的应力梯度
4. CORRELATION BETWEEN ELECTRICAL AND STRUCTURAL PROPERTIES OF MICROCRYSTALLINE HYDROGENATED SILICON FILMS FROM IMPEDANCE AND RAMAN SPECTROSCOPY [C] . Alexandre M. Nardes, Ely A.T. Dirani, Reginaldo Muccillo, Seventeenth European Photovoltaic Solar Energy Conference . 2002

机译：阻抗和拉曼光谱研究微晶氢化硅膜的电学和结构性质之间的相关性
5. Deposition and characterization of hydrogenated amorphous silicon, microcrystalline silicon and silicon-based alloy thin films. [D] . Wang, Cheng. 1991

机译：氢化非晶硅，微晶硅和硅基合金薄膜的沉积和表征。
6. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells [O] . Zhenhai Yang, Pingqi Gao, Cheng Zhang, -1

机译：高折射率介电纳米球对高性能氢化非晶硅薄膜太阳能电池的散射效应
7. In-situ Raman spectroscopy : a method to study and control the growth of microcrystalline silicon for thin-film solar cells [O] . Muthmann Stefan 2012

机译：原位拉曼光谱：研究和控制薄膜太阳能电池微晶硅生长的方法
8. Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980 [R] . 1980

机译：离子镀技术制备氢化非晶硅薄膜和薄膜太阳能电池的制备与表征。最终报告，1979年1月1日至1980年5月31日

Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

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