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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias
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Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias

机译：具有生长表面电偏压的SF-PECVD生长的氢化微晶硅的物理，电和光学性质

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摘要

Characterization results on hydrogenated microcrystalline silicon ((mu)c-Si:H) thin films grown in a Saddle Field (SF) PECVD system are presented. The microcrystalline content of the films is controlled by the application of a positive electrical bias to the film growth surface. The results of photoluminescence, atomic force microscopy, infrared-absorption, and electrical conductivity studies are presented. The results correlate to the changing microcrystalline content of the films in the same way as when microcrystalline content is influenced through growth parameters such as hydrogen dilution in other CVD techniques.
机译：提出了在鞍形场（SF）PECVD系统中生长的氢化微晶硅（μc-Si：H）薄膜的表征结果。膜的微晶含量通过对膜生长表面施加正电偏压来控制。介绍了光致发光，原子力显微镜，红外吸收和电导率研究的结果。结果与薄膜的微晶含量变化相关，就像通过其他CVD技术通过生长参数（例如氢稀释）影响微晶含量时一样。

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