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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Influence of titanium on the formation of a 'barrier' layer during joining an A1N ceramic with copper by the CDB technique
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Influence of titanium on the formation of a 'barrier' layer during joining an A1N ceramic with copper by the CDB technique

机译：钛对通过CDB技术将A1N陶瓷与铜接合过程中“阻挡”层形成的影响

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摘要

The paper presents the results concerning the formation of a 'barrier' layer on AlN ceramic during its joining with copper by the Copper Direct Bonding (CDB) technique. The surface of the ceramic was modified with titanium, using various amounts of this active component. When deposited by sputtering, Ti layers were about 0.35 (mu)m thick. The implantation doses were 1 X 10~(16), 5 X 10~(16), 2 X 10~(17) and 1 X 10~(18) ions/cm~(2), and the ions were accelerated by a voltage of 70 or 15 kV. The modified ceramic was joined with oxidized copper in a nitrogen atmosphere with about 1.5 ppm of oxygen using a belt-type furnace. The results of the examinations of the mechanical strength of the joints and of the microstructural and phase changes induced on the surfaces of the joints during the bonding process formed the basis for establishing the optimum conditions of modification of the AlN surface with titanium ions by introducing them just beneath the surface layer of the ceramic. The modification yielded a multiphase 'barrier' layer, which ensured a continuous pore-less contact between the materials being joined. The joints thus produced showed a high mechanical strength. Optimum conditions were also established for joining the AlN ceramic directly with copper by the CDB technique in a nitrogen atmosphere.
机译：本文介绍了有关通过铜直接键合（CDB）技术在AlN陶瓷与铜连接期间在“氮化物”陶瓷上形成“阻挡层”的结果。使用各种量的这种活性成分，用钛对陶瓷表面进行改性。当通过溅射沉积时，Ti层为约0.35μm厚。注入剂量为1 X 10〜（16），5 X 10〜（16），2 X 10〜（17）和1 X 10〜（18）离子/ cm〜（2），并且离子被a加速电压为70或15 kV。使用带式炉在氮气气氛中，约1.5ppm的氧气下将改性的陶瓷与氧化的铜结合。通过检查接合处的机械强度以及在接合过程中在接合处表面引起的微观结构和相变的检查结果，为通过引入钛离子建立AlN表面改性的最佳条件奠定了基础。恰好在陶瓷表层之下。改性产生了多相“阻挡层”，该层确保了被连接材料之间的连续无孔接触。这样制成的接头显示出高的机械强度。还建立了在氮气气氛中通过CDB技术将AlN陶瓷与铜直接连接的最佳条件。

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