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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Microstructural and dielectric properties of donor doped (La~(3+)) CaCu_(3)Ti_(4)O_(12) ceramics
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Microstructural and dielectric properties of donor doped (La~(3+)) CaCu_(3)Ti_(4)O_(12) ceramics

机译：施主掺杂（La〜（3+））CaCu_（3）Ti_（4）O_（12）陶瓷的微结构和介电性能

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摘要

The effect of La~(3+) doping on Ca~(2+) sites in CaCu_(3)Ti_(4)O_(12) (CCTO) was examined. Polycrystalline samples in the chemical formula Ca_((1-x))La_((2/3)x)Cu_(3)Ti_(4)O_(12) with x velence 0, 0.5, 1 were synthesized via the conventional solid state reaction route. X-ray powder diffraction analysis confirmed the formation of the monophasic compounds and indicated the structure to be remaining cubic with a small increase in lattice parameter with increase in La~(3+) doping. The dielectric and impedance characteristics of Ca_((1-x))La_((2/3)x)Cu_(3-)Ti_(4)O_(12) were studied in the 100 Hz-10 MHz frequency range at various temperatures (100-475 K). A remarkable decrease in grain size from 50 (mu)m to 3-5 (mu)m was observed on La~(3+) substitution. The dielectric constant of CaCu_(3)Ti_(4)O_(12) decreased drastically on La~(3+) doping. The frequency and temperature responses of dielectric constant of La~(3+) doped samples were found to be similar to that of CaCu_(3)Ti_(4)O_(12). The effects of La~(3+) doping on the electrical properties of CaCu_(3)Ti_(4)O_(12) were probed using impedance spectroscopy. The conducting properties of grain decreased while that of the grain boundary increased on La~(3+) doping, resulting in a decrease of the internal barrier layer effect. A decrease in grain boundary capacitance and stable grain response in La~(3+) doped CCTO ceramics were unambiguously established by modulus spectra studies.
机译：研究了La〜（3+）掺杂对CaCu_（3）Ti_（4）O_（12）（CCTO）中Ca〜（2+）位点的影响。通过常规固态合成化学式为Ca _（（1-x））La _（（2/3）x）Cu_（3）Ti_（4）O_（12）的多晶样品，x偏度为0、0.5、1反应路线。 X射线粉末衍射分析证实了单相化合物的形成，并表明该结构保持立方，晶格参数随La〜（3+）掺杂的增加而略有增加。在100 Hz-10 MHz频率范围内，研究了Ca _（（1-x））La _（（2/3）x）Cu_（3-）Ti_（4）O_（12）的介电和阻抗特性（100-475 K）。在La〜（3+）取代时，观察到晶粒尺寸从50μm显着减小到3-5μm。 La〜（3+）掺杂后，CaCu_（3）Ti_（4）O_（12）的介电常数急剧下降。发现La〜（3+）掺杂样品的介电常数频率和温度响应与CaCu_（3）Ti_（4）O_（12）相似。用阻抗光谱法研究了La〜（3+）掺杂对CaCu_（3）Ti_（4）O_（12）电学性能的影响。掺杂La〜（3+）后，晶粒的导电性能下降，而晶界的导电性能增加，导致内部势垒层效应减小。通过模量谱研究明确地确定了掺杂La〜（3+）的CCTO陶瓷中晶界电容的降低和稳定的晶粒响应。

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