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首页> 外文期刊>Journal of materials science >Properties of ITO thin films rapid thermally annealed in different exposures of nitrogen gas
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Properties of ITO thin films rapid thermally annealed in different exposures of nitrogen gas

机译：氮气不同曝光的ITO薄膜的特性快速热退火

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摘要

Indium tin oxide (ITO) thin films were rapid thermal annealed (RTA) for 5 min at a temperature of 550 °C in different exposures of nitrogen gas. Effects of these exposures on the structural, morphological, electrical, and optical properties of these films were investigated using X-ray diffraction, atomic force microscopy and field emission-scanning electron microscopy, four-point probe and hall effect measurements, and ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer, respectively. The un-exposed RTA ITO films maintained (400) plane preferential orientation similar to the un-annealed sample. However, this plane preferential orientation was reduced relative to (222) plane for exposed RTA sample. The grains and surface roughness parameters were reduced for exposed and enhanced for un-exposed RTA samples as compared to the un-annealed sample. Relatively higher electrical conductivity, average solar transmittance, and bandgap values were observed for ITO films annealed while exposed to nitrogen gas. The exposed RTA ITO films showed sheet resistance of 7.91 Ω sq~(-1). average solar transmittance of 83%, and bandgap of 3.93 eV. Findings from this study suggest that RTA exposure have the potential to control ITO thin films properties, hence, extending its potential applications.
机译：氧化铟锡（ITO）薄膜在550℃的温度下在氮气的不同暴露时呈快速热退火（RTA）5分钟。使用X射线衍射，原子力显微镜和场发射扫描电子显微镜，四点探针和霍尔效应测量，研究了这些曝光对这些薄膜的结构，形态，电和光学性质的影响，并进行了四点探针和霍尔效应测量和紫外线 - 红外（UV-Vis-NIR）分光光度计分别。未暴露的RTA ITO薄膜维持（400）平面优先取向类似于未退火的样品。然而，对于暴露的RTA样品相对于（222）平面，该平面优先取向减小。与未退火的样品相比，将晶粒和表面粗糙度参数降低并增强未暴露的RTA样品。相对较高的电导率，平均太阳透射率和带隙值被观察到ITO薄膜退火，同时暴露于氮气。暴露的RTA ITO薄膜显示薄层电阻为7.91ΩSQ〜（-1）。平均太阳透射率为83％，带3.93eV的带隙。从本研究表明RTA暴露具有控制ITO薄膜特性的可能性，因此延长其潜在应用。

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  • 来源
    《Journal of materials science》 |2020年第19期|16406-16413|共8页
  • 作者

    E. R. Ollotu; J. S. Nyarige; N. R. Mlyuka; M. E. Samiji; M. Diale;

  • 作者单位

    Physics Department Mkwawa University College of Education P.O. Box 2513 Iringa Tanzania;

    Department of Physics University of Pretoria Private Bag X20 Hatfield 0028 South Africa;

    Physics Department University of Dar es Salaam P.O. Box 35063 Dar es Salaam Tanzania;

    Physics Department University of Dar es Salaam P.O. Box 35063 Dar es Salaam Tanzania;

    Department of Physics University of Pretoria Private Bag X20 Hatfield 0028 South Africa;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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