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首页> 外文期刊>Applied Surface Science >Influence of the substrate and nitrogen amount on the microstructural and optical properties of thin r.f.-sputtered ZnO films treated by rapid thermal annealing
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Influence of the substrate and nitrogen amount on the microstructural and optical properties of thin r.f.-sputtered ZnO films treated by rapid thermal annealing

机译：衬底和氮含量对快速热退火处理的射频溅射ZnO薄膜的微观结构和光学性能的影响

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摘要

N-doped ZnO (ZnO:N) thin films, intended to be used as one of the layers in solar cell applications were deposited by r.f. sputtering, using ZnN target (99.9% purity), on silicon and fused silica substrates. In the gas flow composition, Ar was kept constant (50%) and the O_2/N_2 ratio was varied as: 40%/10%, 25%/25% and 10%/40%. After deposition, rapid thermal annealing (RTA) at 400 and 550-C for 1 min in N_2 ambient has been performed. The RTA impact on the optical and microstructural properties of ZnO:N thin films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM) coupled with selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX), UV-vis-NIR spectroscopy, UV-vis-NIR spectroscopic ellipsometry (SE) and infrared ellipsometry (IR-SE). The as-deposited (ad) ZnO:N films are polycrystalline with preferentially oriented columnar crystals. After RTA we found ZnO:N films with improved crystallinity and fewer boundary defects. We report optical constants of ZnO:N from UV to IR spectral range as well as the infrared active phononic modes.
机译：r.f.沉积了打算用作太阳能电池应用层之一的N掺杂ZnO（ZnO：N）薄膜。使用ZnN靶（纯度为99.9％）在硅和熔融石英衬底上进行溅射。在气流组成中，Ar保持恒定（50％），并且O_2 / N_2的比率变化为：40％/ 10％，25％/ 25％和10％/ 40％。沉积后，已在N_2环境中于400和550-C下进行了1分钟的快速热退火（RTA）。通过X射线衍射（XRD），原子力显微镜（AFM），透射电子显微镜（TEM）结合选择区域电子衍射（SAED）和光谱法研究了RTA对ZnO：N薄膜的光学和微观结构性质的影响。能量色散X射线光谱仪（EDX），UV-vis-NIR光谱仪，UV-vis-NIR光谱椭圆仪（SE）和红外椭圆仪（IR-SE）。沉积后的（ad）ZnO：N薄膜是具有优先取向的柱状晶体的多晶。在RTA之后，我们发现ZnO：N薄膜具有改善的结晶度和较少的边界缺陷。我们报告了ZnO：N从紫外到红外光谱范围以及红外主动声子模式的光学常数。

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  • 来源
    《Applied Surface Science》 |2012年第2012期|815-823|共9页
  • 作者

    Madalina Nicolescu; Mihai Anastasescu; S. Preda; H. Stroescu; M. Stoica; V.S. Teodorescu; E. Aperathitis; V. Kampylafka; M. Modreanu; M. Zaharescu; M. Gartner;

  • 作者单位

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

    National Institute of Material Physics, 105 bis Atomistilor Street, 077125 Bucharest-Magurele, Romania;

    FORTH-IESL, Crete, Greece;

    FORTH-IESL, Crete, Greece;

    Tyndall National Institute, University College Cork, Cork, Ireland;

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

    Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202,060021 Bucharest, Romania;

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  • 正文语种 eng
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  • 关键词

    N-doped ZnO; AFM; XRD; TEM and SAED; spectroscopic ellipsometry; phonon modes;

    机译：N掺杂的ZnO;原子力显微镜XRD;TEM和SAED;椭圆偏振光谱法声子模式;

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