Influence of phase transformation on structure-property relationship in quaternary ln_(10)Sb_(10)Ag_(10)Se_(70) chalcogenide films

Rita Sharma; Shaveta Sharma; Praveen Kumar; R. Thangaraj; K. Asokan; M. Mian

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Influence of phase transformation on structure-property relationship in quaternary ln_(10)Sb_(10)Ag_(10)Se_(70) chalcogenide films

机译：相变对季醛（10）AG_（10）SE_（70）硫族化物薄膜结构 - 性能关系的影响

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This work reports the effect of thermal annealing (353-413 K) on structure and physical properties of thermally evaporated In_(10)Ag_(10)Sb_(10)Se_(70) chalcogenide films. The samples were characterized by X-ray diffraction, transmission electron microscopy, TEM, Raman spectroscopy, optical absorption and photoconductivity measurements. Thermal annealing favours amorphous to polycrystalline structure transition with the growth of Se, AgInSe_2 and AgSbSe_2 phases. A significant change in position/ shape of Raman bands upon annealing has been observed. The indirect optical gap decreases from 1.44 to 0.68 eV while tailing parameter increases with annealing. Photosensitivity decreases from 29.3 to 14.2 with annealing temperature. The decay of photocurrents is well fitted to stretched exponential function; the value of decay time constant increases while local minimum value of dispersion parameter at 353 K has been observed. These results are explained on the basis of amorphous crystalline phase transformation in chalcogenides and are important for developing new materials for emerging technologies.

机译：该工作报告了热退火（353-413K）对热蒸发的结构和物理性质的影响和物理性质的含量和物理性质的含量和物理性质。（10）AG_（10）SB_（10）SE_（70）硫族化物薄膜。通过X射线衍射，透射电子显微镜，TEM，拉曼光谱，光学吸收和光电导测量来表征样品。热退火与多晶硅结构过渡的热退火与SE，Aginse_2和AgSBSE_2相的生长。已经观察到退火时拉曼带的位置/形状的显着变化。间接光学间隙从1.44到0.68eV降低，同时拖尾参数随退火而增加。光敏性从退火温度的29.3降至14.2。光电流的衰减适合于拉伸指数函数;衰减时间常数的值增加，而观察到353 k处的分散参数的局部最小值。这些结果是基于硫芥子的非晶晶相转化来解释，对于开发新兴技术的新材料非常重要。

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来源
《Journal of materials science》 |2020年第19期|16398-16405|共8页
作者
Rita Sharma; Shaveta Sharma; Praveen Kumar; R. Thangaraj; K. Asokan; M. Mian;
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作者单位

Department of Physics GND University Amritsar 143005 India;

Department of Physics GND University Amritsar 143005 India;

Department of Physics. DAV University Jalandhar 144012 India;

Department of Physics GND University Amritsar 143005 India;

Material Science Division Inter University Accelerator Centre New Delhi India;

Department of Physics GND University Amritsar 143005 India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Influence of phase transformation on structure-property relationship in quaternary ln_(10)Sb_(10)Ag_(10)Se_(70) chalcogenide films

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