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首页> 外文期刊>Journal of materials science >Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application
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Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application

机译：用于改进的模拟/射频应用的栅极 - 全绕连接晶体管介电调制和金属T形源/漏极性能评价

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摘要

In this work, the impact of SiO_2 dielectric channel modulation along with metalloid T-shaped source-drain on the analog-RF characteristics of gate-all-around junctionless Nanowire Transistor (JNT) has been analysed. Metalloid T-shaped source-drain contacts create the charge plasma therefore it is also referred as Charge Plasma Transistor (CPT). Impact of different source/drain materials on band gap energy, drain current, transconductance etc. is studied. Ambipolarity, Non-linear behavior and impact of high temperature on novel CPT-JNT device have also been analysed. A dielectric modulated CPT-JNT is proposed. Results demonstrate that charge plasma technique resolve the degeneracy problem of semiconductor in junctionless transistor. Use of dielectric pocket completely reduces the ambipolar nature of CPT-JNT. Use of Charge plasma technique along with gate-all-around junctionless transistor tremendously increases transconductance, device gain (current and power). The device is well suitable for analog/RF applications.
机译：在这项工作中，已经分析了SiO_2电介质通道调制的影响以及在栅极 - 全绕无线连接纳米线晶体管（JNT）的模拟RF特性上的金属T形源极漏。金属T形源极 - 漏极触点产生电荷等离子体，因此它也称为电荷等离子体晶体管（CPT）。研究了不同源/沥干材料对带隙能量，漏极电流，跨导等的影响。还分析了植物，非线性行为和高温对新型CPT-JNT装置的影响。提出了一种电介质调制的CPT-JNT。结果表明，电荷等离子体技术解决了无连接晶体管中半导体的退化问题。使用介电口袋完全降低了CPT-JNT的Ambolar性质。电荷等离子体技术以及栅极 - 全绕的连接晶体管的使用巨大地增加了跨导，器件增益（电流和功率）。该设备适用于模拟/射频应用。

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  • 来源
    《Journal of materials science》 |2021年第8期|10943-10950|共8页
  • 作者

    Yogesh Pratap; Sachin Kumar; R. S. Gupta; Mridula Gupta;

  • 作者单位

    Department of Instrumentation Shaheed Rajguru College of Applied Sciences for Women University of Delhi New Delhi 110096 India;

    Department of Electronics Maharaja Agrasen College University of Delhi New Delhi 110096 India;

    Department of Electronics and Communication Engineering Maharaja Agrasen Institute of Technology New Delhi 110086 India;

    Semiconductor Device Research Laboratory Department of Electronic Science University of Delhi South Campus New Delhi 110021 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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