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机译:射频溅射(Pb,La)(Zr,Ti)O_3铁电薄膜的线性和非线性光学性质
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;
机译:射频磁控溅射制备(Pb,La)(Zr,Ti)O-3铁电薄膜的线性和非线性光学性质
机译:高度(100)的(Pb_(1-x)La_x)Ti_(1-x / 4)O_3 / Pb(Zr_(0.20)Ti_(0.80))O_3 /(Pb_(1-x)La_x)Ti_(1 -x / 4)O_3射频磁控溅射多层薄膜
机译:Pb(Zr_(0.8)Ti_(0.2))O_3 / Pb(Zr_(0.2)Ti_(0.8))O_3多层薄膜的介电和铁电性能的取向依赖性
机译:应变增强的PB(Zr_(0.8)Ti_(0.2))O_3 / PB(Zr_(0.2)Ti_(0.8))O_3多层薄膜而无缓冲层的介电和铁电性能
机译:脉冲激光沉积在非线性光波导中生长的铁电氧化物薄膜的合成与性能
机译:Pb(Zr0.53Ti0.47)O3薄膜中铁电和光学性质的厚度依赖性
机译:双枪RF磁控溅射的Pb(Zr0.9Ti0.1)O3 / Pb(Zr0.1Ti0.9)O3多层薄膜的制备及电性能
机译:a-sITE-aND /或B-sITE-mODIFIED pBZRTIO3材料和(pB,sR,Ca,Ba,mG)(ZR,TI,NB,Ta)O3薄膜,具有铁电随机存取存储器和高性能薄膜微处理器的实用性