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Effects of oxygen partial pressure control on the microstructure and PTCR properties of Ho doped BaTiO3

机译：氧分压控制对掺Ho的BaTiO3的微观结构和PTCR性能的影响

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摘要

Effects of oxygen partial pressure ( $ {hbox{P}}_{{hbox{O}}_{hbox{2}} } $ ) control on the electrical properties and microstructural development of (Ba1-xHox)0.997TiO3 were studied. An oxidation condition ( $ {hbox{P}}_{{hbox{O}}_{hbox{2}} } $ ～ 1.0 atm) was maintained during the heating process, and then the specimen was sintered in a reducing atmosphere ( $ {hbox{P}}_{{hbox{O}}_{hbox{2}} } $ < 10?9 atm) at 1350 °C, followed by the annealing process at 1000 °C and $ {hbox{P}}_{{hbox{O}}_{hbox{2}} } $ = 1 atm. The switching temperature (TS) from the oxidation atmosphere to the reducing condition was changed from 1100 to 1350 °C. A significant decrease in the room-temperature resisitivity (ρ25) was observed as TS was increased. The temperature coefficient of resistance (TCR) was independent of the change in TS, and closed pores decreased with increasing TS.
机译：氧分压（$ {hbox {P}} _ {{hbox {O}} _ {hbox {2}}} $）对（Ba1-x Hox < / sub>）0.997 TiO3 。在加热过程中保持氧化条件（$ {hbox {P}} _ {{hbox {O}} _ {hbox {2}}} $〜1.0 atm），然后在还原气氛下烧结样品（ $ {hbox {P}} _ {{hbox {O}} _ {hbox {2}}} $ / sub> 10？9 atm），然后在1350°C下退火过程在1000°C和$ {hbox {P}} _ {{hbox {O}} _ {hbox {2}}} $ = 1个大气压下进行。从氧化气氛到还原条件的转换温度（TS ）从1100改变为1350℃。随着TS 的增加，室温电阻率（ρ25）显着下降。电阻温度系数（TCR）与TS 的变化无关，并且封闭孔随着TS 的增加而减小。

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  • 来源
    《Journal of Materials Science》 |2007年第16期|6696-6700|共5页
  • 作者

    Soo Kyong Jo; Young Ho Han; Kwang Hwi Choi;

  • 作者单位

    Department of Materials Engineering Sungkyunkwan University 300 Chunchun-dong Jangan-gu Suwon 440-746 Korea;

    Department of Materials Engineering Sungkyunkwan University 300 Chunchun-dong Jangan-gu Suwon 440-746 Korea;

    Joinset Co. Ltd Ansan 425-110 Korea;

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