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首页> 外文期刊>Journal of Materials Science >Effects of oxygen partial pressure control on the microstructure and PTCR properties of Ho doped BaTiO3
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Effects of oxygen partial pressure control on the microstructure and PTCR properties of Ho doped BaTiO3

机译：氧分压控制对掺Ho的BaTiO3显微组织和PTCR性能的影响

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摘要

Effects of oxygen partial pressure (P-O2) control on the electrical properties and microstructural development of (Ba1-xHox)(0.997)TiO3 were studied. An oxidation condition (P-O2 similar to 1.0 atm) was maintained during the heating process, and then the specimen was sintered in a reducing atmosphere (P-O2 < 10(-9) atm) at 1350 degrees C, followed by the annealing process at 1000 degrees C and P-O2 = 1 atm. The switching temperature (T-S) from the oxidation atmosphere to the reducing condition was changed from 1100 to 1350 degrees C. A significant decrease in the room-temperature resisitivity (rho(25)) was observed as T-S was increased. The temperature coefficient of resistance (TCR) was independent of the change in T-S, and closed pores decreased with increasing T-S.
机译：研究了氧分压（P-O2）控制对（Ba1-xHox）（0.997）TiO3电学性质和微结构发展的影响。在加热过程中保持氧化条件（P-O2类似于1.0 atm），然后在还原气氛（P-O2 <10（-9）atm）中于1350摄氏度下烧结样品，然后进行退火在1000摄氏度和P-O2 = 1 atm的条件下进行处理。从氧化气氛到还原条件的转换温度（T-S）从1100变为1350℃。随着T-S的增加，观察到室温电阻率（rho（25））显着降低。电阻温度系数（TCR）与T-S的变化无关，并且闭合孔随着T-S的增加而减小。

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