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首页> 外文期刊>Journal of Materials Science >The study of optical properties of In2O3 and of mixed oxides In2O3−MoO3 system deposited by coevaporation
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The study of optical properties of In2O3 and of mixed oxides In2O3−MoO3 system deposited by coevaporation

机译：共蒸发沉积In2 O3 和混合氧化物In2 O3 -MoO3 系统的光学性质的研究

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摘要

A discussion of the optical properties of two systems of dielectric films i.e. In2O3 and of mixed oxides In2O3−MoO3 system is presented. Film thickness, substrate temperature, annealing and composition (in molar%) have a profound effect on the structure and optical properties of these films. The decrease in optical band gap with the increase in film thickness of In2O3 is interpreted in terms of incorporation of oxygen vacancies in the In2O3 lattice. The decrease in optical band gap with the increase in substrate temperature and annealing of In2O3 thin films is ascribed to the release of trapped electrons by thermal energy or by the outward diffusion of the oxygen-ion vacancies, which are quite mobile even at low temperature. For the mixed oxides In2O3−MoO3 system the results are found to be compatible with the reduction in the value of optical band gap of these materials as the molar fraction of MoO3 increases in the In2O3 thin films and is attributed to the incorporation of Mo(VI) ions in an In2O3lattice that causes the indium orbital to become a little less tightly bound. The decrease in optical band gap of mixed oxides In2O3−MoO3 system, with increasing film thickness is interpreted in terms of incorporation of oxygen vacancies in both In2O3 and MoO3 lattice which are also believed to be the source of conduction electrons in In2O3–MoO3 complex. The decrease in optical band gap with increasing substrate temperature and annealing of mixed oxides In2O3−MoO3 system is due to the increasing concentration of oxygen vacancies, formation of indium and molybdenum species of lower oxidation state and indium interstitials. The blue colouration of mixed oxides In2O3–MoO3 samples is due to the inter-electron transfer from oxygen 2p to molybdenum 4d level due to which Mo species of lower oxidation states are formed.
机译：讨论了两种介质膜即In2 O3 和混合氧化物In2 O3 -MoO3 系统的光学性质。膜的厚度，基板温度，退火和组成（以摩尔％计）对这些膜的结构和光学性能有深远的影响。随着In2 O3 薄膜厚度的增加，光学带隙的减小是由于In2 O3 晶格中氧空位的结合。 In2 O3 薄膜的光学带隙随着衬底温度的升高和退火的减小而归因于热能或氧离子空位的向外扩散释放了捕获的电子，即使在低温下也可以移动。对于混合氧化物In2 O3 -MoO3 系统，发现结果与这些材料的光学带隙值随MoO3 在In2 O3 薄膜中增加，并且归因于Mo（VI）离子在In2 O3 晶格中的掺入，导致铟的轨道变小不太紧密地绑定。混合氧化物In2 O3 -MoO3 系统的光学带隙随膜厚的增加而减小，这是由于两种In2 O3中氧空位的引入所致。 sub>和MoO3 晶格也被认为是In2 O3 -MoO3 络合物中传导电子的来源。随着衬底温度的升高和混合氧化物In2 O3 -MoO3 系统的退火，光带隙的减小是由于氧空位浓度的增加，铟和钼的形成降低了。氧化态和铟间隙。混合氧化物In2 O3 -MoO3 样品的蓝色是由于电子从氧2p到钼4d的电子转移，从而形成了较低氧化态的Mo物种。

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  • 来源
    《Journal of Materials Science》 |2006年第10期|2859-2867|共9页
  • 作者

    M. Anwar; I. M. Ghauri; S. A. Siddiqi;

  • 作者单位

    Physics Department Government College;

    Centre for Advanced Studies in Physics G. C. University;

    Centre for Solid State Physics University of the Punjab;

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