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Future Dielectric Materials for CNT Interconnects - Possibilities and Challenges

机译：未来用于CNT互连的介电材料-可能性和挑战

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Carbon nanotube (CNT) interconnects are emerging as the ultimate choice for next generation ultra large scale integrated (ULSI) circuits. Significant progress in precise growth of aligned CNTs and integration of multiwalled CNT interconnects into a test chip make them promising candidates for future nanoelectronic chips. Tremendous research efforts were made on silicon based ultra-low-k dielectrics for Cu interconnects, but, the most recent advancements in polymer based composites as dielectric materials open up fresh challenges in the use of low-k dielectrics for CNT interconnects. This paper reviews the emerging polymer composites like Boron Nitride Nanotubes, Graphene/Polyimide composites, Metal Organic Frameworks and small diameter CNTs. Many reviews are already exists on the synthesis, fabrication, dielectric, mechanical, chemical and thermal properties of these materials. In this review, we have explained the specific properties of these materials and the necessities for integrating them into CNT interconnects to meet the requirements of future IC designers.Keywords: low-k dielectric materials, ultra low-k dielectrics, carbon nanotubes, interconnects, dielectric constant,.
机译：碳纳米管（CNT）互连正在成为下一代超大规模集成（ULSI）电路的最终选择。对齐的CNT的精确增长以及将多壁CNT互连集成到测试芯片中的重大进展，使它们成为了未来纳米电子芯片的有希望的候选者。在用于铜互连的基于硅的超低k电介质方面进行了大量研究工作，但是，作为电介质材料的基于聚合物的复合材料的最新进展为将低k电介质用于CNT互连提出了新的挑战。本文综述了新兴的聚合物复合材料，例如氮化硼纳米管，石墨烯/聚酰亚胺复合材料，金属有机骨架和小直径CNT。关于这些材料的合成，制造，介电，机械，化学和热学性质已经有许多评论。在这篇综述中，我们解释了这些材料的特殊性能以及将其集成到CNT互连中以满足未来IC设计人员要求的必要性。关键字：低k电介质材料，超低k电介质，碳纳米管，互连，介电常数，。

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