Controlling the Size of Interior Core of Silicon Nanowires

Soam Ankur; Dusane Rajiv

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Controlling the Size of Interior Core of Silicon Nanowires

机译：控制硅纳米线内部芯的尺寸

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As the physical and electrical properties of silicon nanowires (SiNWs) are determined by their dimension, it is necessary to control their dimension to integrate them in a device. SiNWs were synthesized via Vapor-Liquid-Solid (VLS) mechanism in hot-wire chemical vapor process (HWCVP) technique using silane as a Si source and Sn as a catalyst. Different sizes of nanotemplate have been made by depositing of different amount of Sn using thermal evaporation method. The size of nano-template is found to be increased with the quantity of Sn. The diameter of resulted SiNWs depends on the size of the nano-template and it increases with the nano-template size. However, the diameter of SiNWs is found to be much larger than the used nano-template which is due to the deposition of silicon film on the sidewalls of the growing SiNWs. It is demonstrated here that the diameter of the interior core of SiNWs can be controlled desirable by adjusting the size of the nano-template.

机译：由于硅纳米线（SiNW）的物理和电气特性由其尺寸决定，因此有必要控制其尺寸以将其集成到设备中。 SiNWs是通过蒸气-液体-固相（VLS）机理在热线化学气相法（HWCVP）技术中使用硅烷作为Si源和Sn作为催化剂合成的。通过使用热蒸发方法沉积不同数量的锡，已经制成了不同尺寸的纳米模板。发现纳米模板的尺寸随着Sn的量而增加。产生的SiNW的直径取决于纳米模板的尺寸，并且随纳米模板的尺寸而增加。然而，发现SiNW的直径比所使用的纳米模板大得多，这是由于在生长的SiNW的侧壁上沉积了硅膜。在此证明，可以通过调节纳米模板的尺寸来理想地控制SiNW的内芯的直径。

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来源
《Journal of nano research》 |2017年第2017期|193-198|共6页
作者
Soam Ankur; Dusane Rajiv;
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作者单位

Indian Inst Technol, Dept Met Engn & Mat Sci, Semicond Thin Films & Plasma Proc Lab, Bombay 400076, Maharashtra, India|Siksha O Anusandhan Univ, Ctr Nanosci & Nanotechnol, Nanomat & Device Fabricat Lab, Bhubaneswar, Orissa, India;

Indian Inst Technol, Dept Met Engn & Mat Sci, Semicond Thin Films & Plasma Proc Lab, Bombay 400076, Maharashtra, India;

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正文语种 eng
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关键词
HWCVP; SiNWs; VLS; Sn catalyst;

机译：HWCVP;SiNWs;VLS;Sn催化剂;

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2. Cu nanoparticles on 2D and 3D silica substrates: controlled size and density, and critical size in catalytic silicon nanowire growtht [J] . Arthur Roussey, Pascal Gentile, Dominique Lafond Journal of Materials Chemistry, C. materials for optical and electronic devices . 2013,第8期

机译：2D和3D二氧化硅基底上的Cu纳米粒子：可控制的尺寸和密度，以及催化硅纳米线生长中的临界尺寸
3. Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism [J] . Kanakaraj Rajkumar, Ramanathaswamy Pandian, Amirthapandian Sankarakumar, ACS Omega . 2017,第8期

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5. Theoretical studies of H-passivated silicon nanowires, silicon surface systems and silicon/germanium core/shell nanowires. [D] . Lu, Ning. 2010

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6. Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties [O] . M. Agati, G. Amiard, V. Le Borgne, -1

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7. Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs CoreShell Nanowires Grown on Silicon [O] . -1

机译：在硅片种植的基础，内部和表面的载体重组中，内部和inalas coreShell纳米线在硅中生长

Controlling the Size of Interior Core of Silicon Nanowires

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