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首页> 外文期刊>Journal of nano research >Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)
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Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)

机译：电化学刻蚀时间对n型（100）和（111）晶体上多孔硅太阳能电池性能的影响

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摘要

Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crystallite sizes for the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers were 20.57 and 17.45 nm at 20 and 30 min, respectively, due to the increase in broadening of the full width at half maximum. Photoluminescence peaks for porous silicon layers based on crystalline silicon n-type (100) and (111) wafers increased with growing porosity and a great blue shift in luminescence. The minimum effective coefficient of reflection was obtained from porous silicon layers based on the crystalline silicon n-type (100) wafer compared with n-type (111) wafer and as-grown at different etching times. Porous silicon layers based on the crystalline silicon n-type (100) wafer at 20 min etching time exhibited excellent light trapping at wavelengths ranging from 400 to 1000 nm. Thus, fabricated crystalline silicon solar cells based on porous silicon (100) anti-reflection coating layers achieved the highest efficiency at 15.50% compared to porous silicon (111) anti-reflection coating layers. The efficiency is characterized applying I-V characterization system under 100 mW/cm(2) illumination conditions.
机译：进行电化学蚀刻以基于n型结晶硅（100）和（111）晶片生产多孔硅。蚀刻时间分别为10、20和30分钟。多孔硅层用作晶体硅太阳能电池上的抗反射涂层。最佳蚀刻时间为20分钟，以用于基于n型结晶硅（100）和（111）晶圆制备多孔硅层。在多孔硅层上分别基于平均直径为5.7和5.8 nm的n型结晶硅（100）和（111）晶片生产了具有高孔隙率的纳米孔。基于晶体硅n型（100）和（111）晶圆的多孔硅层在20分钟和30分钟时的平均微晶尺寸分别为20.57和17.45 nm，这是由于半峰全宽的增加所致。基于n型结晶硅（100）和（111）晶片的多孔硅层的光致发光峰随着孔隙率的增加和发光的蓝移增加而增加。与基于n型（111）晶片的多孔硅层相比，在基于n型（111）晶片的多孔硅层中获得了最小的有效反射系数，并且在不同的蚀刻时间生长。在20分钟的蚀刻时间基于n型结晶硅（100）晶圆的多孔硅层在400至1000 nm的波长范围内表现出出色的光捕获性能。因此，与多孔硅（111）抗反射涂层相比，基于多孔硅（100）抗反射涂层的制造的晶体硅太阳能电池实现了15.50％的最高效率。在100 mW / cm（2）的照明条件下应用I-V表征系统来表征效率。

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