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首页> 外文期刊>Journal of nano research >Controlling of Polarity on the Surface Passivation Mechanism of Al2O3 for Black Silicon by CLD
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Controlling of Polarity on the Surface Passivation Mechanism of Al2O3 for Black Silicon by CLD

机译：CLD控制黑硅用Al2O3表面钝化机理的极性

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摘要

Thin Al2O3 films were deposited on p-type black silicon (b-Si) by using chemical liquid phase deposition (CLD) technique. The influence of annealing temperatures on the structural and optical properties of Al2O3 films was investigated. The b-Si with 80-nm Al2O3 films exhibits a low total reflectance of 5%. The sample annealed 300 degrees C exhibits negative fixed charge with the density of 1.5x10(12) cm(-2). With the increasing of annealing temperature, negative shift of C-V curve was observed, indicating the polarity of fixed charge changes to positive, with maximal the density of 8.7x10(11) cm(-2). The evolution of the polarity of fixed charge is assigned to the decreasing of O: Al ratio caused by the transition of the crystalline type of Al2O3. The change of fixed charge polarity in Al2O3 provides a feasible route for both p-and n-type Si passivation in Si solar cells by adjusting the thermal post-treatment.
机译：通过使用化学液相沉积（CLD）技术在p型黑硅（b-Si）上沉积Al2O3薄膜。研究了退火温度对Al2O3薄膜结构和光学性能的影响。具有80nm Al2O3膜的b-Si的总反射率低至5％。退火至300摄氏度的样品显示出负固定电荷，密度为1.5x10（12）cm（-2）。随着退火温度的升高，观察到C-V曲线为负移，表明固定电荷的极性变为正，最大密度为8.7x10（11）cm（-2）。固定电荷极性的演变被归因于由Al2O3晶体类型的转变引起的O：Al比的降低。 Al2O3中固定电荷极性的变化为硅太阳能电池中的p型和n型Si钝化提供了一条可行的途径，方法是调整热后处理。

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