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首页> 外文期刊>Journal of nano research >Ferroelectric-relaxor behavior of highly epitaxial Barium Zirconium Titanate thin films
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Ferroelectric-relaxor behavior of highly epitaxial Barium Zirconium Titanate thin films

机译：高外延钛酸锆锆薄膜的铁电弛豫特性

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摘要

Ferroelectric-relaxor behavior on highly epitaxial Barium Zirconium Titanate (Ba(Zr0.2Ti0.8)O-3) thin film was investigated using the Piezoresponse Force Microscopy specifically to investigate the onset of relaxor behavior. The surface roughness, microstructure and the grain size of the film were systematically studied. Ferroelectric switching at random localized points were observed at room temperature though it has been previously reported that the phase transition in BZT-20 occurs at 285K. Phase reversal with the reversal of the applied voltage was also seen. Scanning Capacitance Microscope has been employed to interrogate the localized change in the capacitance with change in voltage. The thin film sample showed the presence of ferroelectric nano regions at room temperature unlike its bulk counterparts which is paraelectric at room temperature.
机译：使用压电响应力显微镜研究了高外延钛酸钡锆（Ba（Zr0.2Ti0.8）O-3）薄膜上的铁电弛豫行为，专门研究了弛豫行为的发生。系统地研究了薄膜的表面粗糙度，微观结构和晶粒尺寸。尽管先前已经报道BZT-20中的相变发生在285K，但在室温下观察到了在随机局部点的铁电开关。还可以看到随着施加电压的反转而发生的相位反转。扫描电容显微镜已被用来询问电容的局部变化与电压变化的关系。薄膜样品在室温下显示出铁电纳米区域，这与其在室温下为顺电的大体积对应物不同。

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