Electronic Characteristics of Sn-Hal Bonds in Hexa- and Pentacoordinate Tin(Ⅳ) Adducts of Type R_nSnHal_(4-n)L_x

E. A. Kravchenko; M. Yu. Burtzev

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Electronic Characteristics of Sn-Hal Bonds in Hexa- and Pentacoordinate Tin(Ⅳ) Adducts of Type R_nSnHal_(4-n)L_x

机译：R_nSnHal_（4-n）L_x型六配位和五配位锡（Ⅳ）加合物中Sn-Hal键的电子特性

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The σ- and π-electron effects of alkyl/phenyl substituents on the Sn-Hal bonds in penta- and hexacoordinate tin(Ⅳ) chloro and iodo adducts are discussed based on their ~(35)Cl and ~(127)I NQR spectra. Unexpectedly high ~(127)I EFG asymmetry parameters were found in most dialkyl(phenyl)-substituted adducts of thin(Ⅵ) iodides.

机译：基于〜（35）Cl和〜（127）I NQR谱图，讨论了烷基/苯基取代基对五和六配位锡（Ⅳ）氯和碘加合物的Sn-Hal键的σ和π电子效应。在大多数碘化稀（Ⅵ）的二烷基（苯基）取代的加合物中发现出乎意料的高〜（127）I EFG不对称参数。

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来源
《Zeitschrift fur Naturforschung. A, A journal of physical sciences》 |1996年第6期|p.641-645|共5页
作者
E. A. Kravchenko; M. Yu. Burtzev;
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作者单位

Institute of General and Inorganic Chemistry, Leninskii pr. 31, Moscow, 117907 Russia;

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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
~(35)Cl and ~(127)I NQR; adducts of tin(Ⅳ) halides; the electronic effects of alkyl/phenyl substituents;

机译：〜（35）Cl和〜（127）I NQR;卤化锡（Ⅳ）的加合物;烷基/苯基取代基的电子效应;

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Electronic Characteristics of Sn-Hal Bonds in Hexa- and Pentacoordinate Tin(Ⅳ) Adducts of Type R_nSnHal_(4-n)L_x

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