Coupling length and coupling loss in AlGaAs photonic crystal waveguides

Latef M. Ali

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Coupling length and coupling loss in AlGaAs photonic crystal waveguides

机译：AlGaAs光子晶体波导中的耦合长度和耦合损耗

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In this work, we present the theoretical simulation results of a two parallel plasmonic waveguides structure with same geometries. There is a low-index semiconductor AlGaAs layer between the GaAs layer and the metal layer. The coupling length and coupling loss are calculated at the telecom wavelength (1550 nm) for different structures by employing the finite-difference time domain.

机译：在这项工作中，我们提出了具有相同几何形状的两个平行等离子体波导结构的理论仿真结果。在GaAs层和金属层之间存在低折射率半导体AlGaAs层。通过采用有限差分时域，在不同结构的电信波长（1550 nm）处计算出耦合长度和耦合损耗。

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来源
《Journal of Optics》 |2017年第2期|187-190|共4页
作者
Latef M. Ali;
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作者单位

Hawler Institute of Technology, Erbil, Kurdistan Region, Iraq;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Surface plasmons; Coupling length; Coupling loss; Metal-semiconductor-semiconductor waveguides;

机译：表面等离子体激元;耦合长度耦合损耗;金属半导体半导体波导;

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Coupling length and coupling loss in AlGaAs photonic crystal waveguides

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