DIODE-SIDE-PUMPED PASSIVELY Q-SWITCHED MODE-LOCKED 532 nm LASER WITH A Nd:YAG/Cr~(4+):YAG/YAG COMPOSITE CRYSTAL

Siqi Zhu; Zaijun Chen; Zhenqiang Chen; Wei Jiang; Qingmao Zhang; Yihong Chen; Anming Li; Hao Yin; Zhen Li

首页> 外文期刊>Journal of Russian laser research >DIODE-SIDE-PUMPED PASSIVELY Q-SWITCHED MODE-LOCKED 532 nm LASER WITH A Nd:YAG/Cr~(4+):YAG/YAG COMPOSITE CRYSTAL

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DIODE-SIDE-PUMPED PASSIVELY Q-SWITCHED MODE-LOCKED 532 nm LASER WITH A Nd:YAG/Cr~(4+):YAG/YAG COMPOSITE CRYSTAL

机译：具有Nd：YAG / Cr〜（4 +）：YAG / YAG复合晶体的二极管侧泵浦被动Q开关锁模532 nm激光器

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摘要

We present a diode-side-pumped Q-switched mode-locked (QML) laser operating at 532 nm for the first time employing a composite crystal Nd:YAG/Cr~(4+):YAG/YAG and a KTP. The experimental results show that, using a suitable cavity and crystals, one can obtain high-quality QML laser output at 532 nm with a side-pumped system. We measure and analyze the QML performance of the fundamental frequency laser and the green laser. Under a pump power of 127 W, we obtain a QML laser operating at 532 nm with an average power of 4.97 W and a repetition rate of 0.2 GHz for the mode-locked pulses; the corresponding depth of modulation is close to 100%.

机译：我们首次提出了使用复合晶体Nd：YAG / Cr〜（4 +）：YAG / YAG和KTP在532 nm下工作的二极管侧泵Q开关锁模（QML）激光器。实验结果表明，使用合适的腔体和晶体，使用侧面泵浦系统可以获得532 nm的高质量QML激光输出。我们测量和分析基频激光器和绿色激光器的QML性能。在127 W的泵浦功率下，我们获得了工作在532 nm的QML激光器，其平均功率为4.97 W，锁模脉冲的重复频率为0.2 GHz。相应的调制深度接近100％。

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来源
《Journal of Russian laser research》 |2013年第6期|575-580|共6页
作者
Siqi Zhu; Zaijun Chen; Zhenqiang Chen; Wei Jiang; Qingmao Zhang; Yihong Chen; Anming Li; Hao Yin; Zhen Li;
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作者单位

Key Laboratory of Optoelectronic Information and Sensing Technologies Guangdong Higher Education Institutes Guangdong, Guangzhou 510632, China;

Key Laboratory of Optoelectronic Information and Sensing Technologies Guangdong Higher Education Institutes Guangdong, Guangzhou 510632, China;

Key Laboratory of Optoelectronic Information and Sensing Technologies Guangdong Higher Education Institutes Guangdong, Guangzhou 510632, China,Institute of Optoelectronic Engineering Jinan University Guangdong, Guangzhou 510632, China;

Key Laboratory of Optoelectronic Information and Sensing Technologies Guangdong Higher Education Institutes Guangdong, Guangzhou 510632, China;

School of Information and Optoelectronic Science and Engineering South China Normal University Guangdong, Guangzhou 510632, China;

School of Information and Optoelectronic Science and Engineering South China Normal University Guangdong, Guangzhou 510632, China;

Key Laboratory of Optoelectronic Information and Sensing Technologies Guangdong Higher Education Institutes Guangdong, Guangzhou 510632, China;

Institute of Optoelectronic Engineering Jinan University Guangdong, Guangzhou 510632, China;

Institute of Optoelectronic Engineering Jinan University Guangdong, Guangzhou 510632, China;

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正文语种 eng
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关键词
Q-switched mode-locked diode-side-pumped composite crystal; green laser;

机译：调Q开关锁相二极管侧泵浦复合晶体;绿色激光;

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专利

1. HIGH AVERAGE POWER, COMPACT PASSIVELY Q-SWITCHED 532 nm GREEN LASER ON Nd:YAG/Cr~(4+):YAG COMPOSITE CRYSTAL [J] . S. E. Wang, S. Q. Zhu, Z. Q. Chen, Journal of Russian laser research . 2013,第2期

机译：Nd：YAG / Cr〜（4 +）：YAG复合晶体上的高平均功率，紧凑的被动Q开关532 nm绿色激光
2. High-peak power, passively Q-switched, composite, all-poly-crystalline ceramics Nd:YAG/Cr ~(4+):YAG laser and generation of 532-nm green light [J] . Salamu G., Ionescu A., Brandus C.A., Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2012,第1期

机译：高峰值功率，无源调Q开关，复合全结晶陶瓷Nd：YAG / Cr〜（4 +）：YAG激光器和532 nm绿光的产生
3. High-Power passively Q-Switched 532 nm green laser by using Nd:YAG/Cr ~(4+):YAG composite crystal1 [J] . Zhu S.Q., Wang S.E., Chen Z.Q., Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2012,第6期

机译：Nd：YAG / Cr〜（4 +）：YAG复合晶体的高功率无源Q开关532 nm绿色激光1
4. Generation of High-Peak Power 532-nm Green Pulses from Composite, All-Ceramics, Passively Q-switched Nd:YAG/Cr~(4+):YAG Laser [C] . Gabriela SALAMU, Alina IONESCU, Catalina BRANDUS, Conference on optics: Micro-to nanophotonics III . 2013

机译：从复合材料，全陶瓷，被动Q开关Nd：YAG / Cr〜（4 +）：YAG激光器的高峰功率532-NM绿色脉冲
5. Development of a passively Q-switched Nd:YAG microchip laser for use in the Satellite Laser Ranging 2000 project. [D] . Gompers, Samuel Leo. 2000

机译：开发了用于卫星激光测距2000项目的被动调Q开关Nd：YAG微芯片激光器。
6. A Case of Reticulate Acropigmentation of Kitamura Treated with 532-nm Q-Switched Nd:YAG Laser: 10 Years of Follow-Up Observation [O] . Jae Hyung Lee, Jong Hee Lee, Joo Heung Lee 2014

机译：532 nm Q开关Nd：YAG激光治疗Kitamura网状除虫一例：十年随访观察
7. Diode Pumped High Peak Power Quasi Q-Switched and Passively Q-Switched Nd:YVO₄ Lasers at 1064 nm and 532 nm using Cr:YAG and KTP crystals [O] . Mahmoud M. Talat, Ashraf F. El-Sherif 2013

机译：使用Cr：YAG和KTP晶体的二极管泵浦高峰值功率准Q开关和无源Q开关Nd：YVO _{4 激光器在1064 nm和532 nm}

DIODE-SIDE-PUMPED PASSIVELY Q-SWITCHED MODE-LOCKED 532 nm LASER WITH A Nd:YAG/Cr~(4+):YAG/YAG COMPOSITE CRYSTAL

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