PASSIVELY Q-SWITCHED MODE-LOCKING Nd:(Gd_(0.3)Y_(0.7)_2SiO_5 LASER BASED ON SEMICONDUCTOR SATURABLE ABSORBER MIRROR

Tian Zhen; Wang Beibei; Gao Congcong; Wu Qiang; Xu Xiaodong; Xu Jun; Zhang Bingyuan

首页> 外文期刊>Journal of Russian laser research >PASSIVELY Q-SWITCHED MODE-LOCKING Nd:(Gd_(0.3)Y_(0.7)_2SiO_5 LASER BASED ON SEMICONDUCTOR SATURABLE ABSORBER MIRROR

【24h】

PASSIVELY Q-SWITCHED MODE-LOCKING Nd:(Gd_(0.3)Y_(0.7)_2SiO_5 LASER BASED ON SEMICONDUCTOR SATURABLE ABSORBER MIRROR

机译：被动Q开关模式锁定ND :( GD_（0.3）Y_（0.7）_2SIO_5激光，基于半导体可饱和吸收镜

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A diode-end-pumped continuous-wave and passively Q-switched mode-locked Nd:(Gd0.3Y0.7)(2)SiO5 laser was designed. At a pump power of 0.8W, we achieve dual-wavelength continuous-wave (CW) laser generation at wavelengths around 1,073.26 and 1,076.62 nm. Using a semiconductor saturable absorber mirror (SESAM), we obtain passively Q-switched mode-locked (QML) operation. A maximum average output power of 171 mW is obtained under a pump power of 5 W. The optical conversion efficiency for the QML laser is 3.4%. The duration of the mode-locked pulse is estimated to be about 649 ps at a repetition rate of 101.34 MHz.

机译：设计了二极管端泵送的连续波和被动Q开关模式锁定的Nd：（Gd0.3Y0.7）（2）SiO5激光器。在0.8W的泵浦功率下，我们在波长为1,073.26和1,076.62nm的波长下实现双波长连续波（CW）激光。使用半导体可饱和吸收镜（SESAM），我们获得被动Q开关模式锁定（QML）操作。在5W的泵浦功率下获得171mW的最大平均输出功率。QML激光器的光学转换效率为3.4％。模式锁定脉冲的持续时间以101.34MHz的重复率估计为约649ps。

著录项

来源
《Journal of Russian laser research》 |2019年第1期|94-99|共6页
作者
Tian Zhen; Wang Beibei; Gao Congcong; Wu Qiang; Xu Xiaodong; Xu Jun; Zhang Bingyuan;
展开▼
作者单位

Liaocheng Univ Sch Phys Sci & Informat Engn Shandong Key Lab Opt Commun Sci & Technol Liaocheng 252059 Peoples R China|Beijing Univ Posts & Telecommun State Key Lab Informat Photon & Opt Commun Beijing Peoples R China;

Liaocheng Univ Sch Phys Sci & Informat Engn Shandong Key Lab Opt Commun Sci & Technol Liaocheng 252059 Peoples R China;

Liaocheng Univ Sch Phys Sci & Informat Engn Shandong Key Lab Opt Commun Sci & Technol Liaocheng 252059 Peoples R China;

Beijing Univ Posts & Telecommun State Key Lab Informat Photon & Opt Commun Beijing Peoples R China;

Jiangsu Normal Univ Sch Phys & Elect Engn Jiangsu Key Lab Adv Laser Mat & Devices Xuzhou 221116 Jiangsu Peoples R China;

Tongji Univ Inst Adv Study Sch Phys Sci & Engn Shanghai 200092 Peoples R China;

Liaocheng Univ Sch Phys Sci & Informat Engn Shandong Key Lab Opt Commun Sci & Technol Liaocheng 252059 Peoples R China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Nd:(Gd0; 3Y0; 7)(2)SiO5; semiconductor saturable absorber mirror; passively Q-switched mode locking;

机译：ND :( GD0;3Y0;7）（2）SiO5;半导体饱和吸收镜;被动Q开关模式锁定;

相似文献

外文文献
中文文献
专利

1. PASSIVELY Q-SWITCHED MODE-LOCKING Nd:(Gd_(0.3)Y_(0.7)_2SiO_5 LASER BASED ON SEMICONDUCTOR SATURABLE ABSORBER MIRROR [J] . Tian Zhen, Wang Beibei, Gao Congcong, Journal of Russian laser research . 2019,第1期

机译：基于半导体可饱和反射镜的被动Q开关锁模Nd：（Gd_（0.3）Y_（0.7）_2SiO_5激光
2. Passively Q-switched laser performance of the mixed crystals Nd:Lu_(0.15)Y_(0.85)VO_4,Nd:Lu_(0.5)Y_(0.5)VO_4 and Nd:Lu_(0.33)Y_(0.37)Gd_(0.3)VO_4 with GaAs saturable absorber [J] . Leilei Wu, Shengzhi Zhao, Dechun Li, Optical and quantum electronics . 2013,第3期

机译：混合晶体Nd：Lu_（0.15）Y_（0.85）VO_4，Nd：Lu_（0.5）Y_（0.5）VO_4和Nd：Lu_（0.33）Y_（0.37）Gd_（0.3）VO_4的被动调Q激光性能GaAs饱和吸收体
3. Passively Q-switched laser performance of an a-cut Nd:Lu _(0.33)Y_(0.36)Gd_(0.3)VO_4 crystal at 1.34 μm with V~(3+):YAG as the saturable absorber [J] . Zhang S., Wang X., He J., Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2013,第9期

机译：以V〜（3 +）：YAG为饱和吸收体的无切Nd：Lu _（0.33）Y_（0.36）Gd_（0.3）VO_4晶体在1.34μm处的被动调Q激光性能
4. Passively Q-Switched Er3+-Doped ZBLAN Fiber Laser at ∼3.5 μm Based on a Semiconductor Saturable Absorber Mirror [C] . Zhiqiang Fang, Zhixiang Deng, Jun Liu, Conference on Lasers and Electro-Optics . 2020

机译：基于半导体饱和吸收镜的无源Q开关掺Er3 +掺杂的ZBLAN光纤激光器，波长约为3.5μm
5. Indium arsenide/gallium arsenide Quantum Dot Semiconductor Saturable Absorber for passive mode-locking of ultrashort near infrared lasers [D] . Scurtescu, Cristian 2007

机译：砷化铟/砷化镓量子点半导体可饱和吸收体，用于超短近红外激光器的无源锁模
6. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror [O] . Yanlong Shen, Yishan Wang, Kunpeng Luan, -1

机译：半导体饱和吸收镜的瓦特级被动调Q重掺Er3 +的ZBLAN光纤激光器
7. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser [O] . Shougui Ning, Guoying Feng, Shenyu Dai, 2018

机译：中红外FE2 +：用于被动Q开关ER3 + ZBLAN光纤激光器的ZnSe半导体可饱和吸收器镜
8. Two Saturable Absorbers for Extending the Wavelength Limits of a Passively Q-Switched CO2 Laser [R] . Marcus, S. 1969

机译：两个可饱和吸收器用于扩展被动Q开关CO2激光器的波长限制

PASSIVELY Q-SWITCHED MODE-LOCKING Nd:(Gd_(0.3)Y_(0.7)_2SiO_5 LASER BASED ON SEMICONDUCTOR SATURABLE ABSORBER MIRROR

摘要

著录项

相似文献

相关主题

期刊订阅