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首页> 外文期刊>Journal of supercomputing >Schmitt trigger-based single-ended 7T SRAM cell for Internet of Things (IoT) applications
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Schmitt trigger-based single-ended 7T SRAM cell for Internet of Things (IoT) applications

机译：适用于物联网（IoT）应用的基于施密特触发器的单端7T SRAM单元

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摘要

The Internet of Things is an emerging application area which is going to become one of the leading electronic hubs in the semiconductor industry. The IoT systems require battery-enabled energy-efficient memory circuits to operate at ultra-low voltage (ULV). In this paper, a novel Schmitt trigger-based, single-ended 7-Transistor (7T) Static Random Access Memory (SRAM) cell which uses dynamic body bias technique for IoT applications is presented. The proposed 7T SRAM cell is designed using standard 45nm Complementary Metal Oxide Semiconductor technology at an ULV of 0.3V. The post-layout simulation results have shown more than 22% improvements in the Read Static Noise Margin and more than 44% write, 63% read energy savings in comparison with the conventional 6T cell, 7T, single-ended 8T, and Schmitt trigger 11T cell designs. The proposed design is also found to be stable at different process corners and supply voltages. A new quality metric SNM per unit Area to Energy Ratio which evaluates the overall performance of the SRAM cell design is calculated and is found to be highest for the proposed design.
机译：物联网是一个新兴的应用领域，它将成为半导体行业中领先的电子枢纽之一。物联网系统需要电池供电的节能存储电路以超低电压（ULV）运行。在本文中，提出了一种新颖的基于施密特触发器的单端7晶体管（7T）静态随机存取存储器（SRAM）单元，该单元在物联网应用中使用了动态主体偏置技术。拟议的7T SRAM单元采用标准的45nm互补金属氧化物半导体技术，ULV为0.3V进行设计。布局后的仿真结果显示，与传统的6T单元，7T，单端8T和施密特触发器11T相比，读取静态噪声裕度提高了22％以上，写入提高了44％以上，读取能量节省了63％单元设计。还发现建议的设计在不同的工艺角和电源电压下都是稳定的。计算了评估SRAM单元设计总体性能的新质量度量单位面积能量比（SNM），发现该质量度量对拟议设计而言是最高的。

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