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首页> 外文期刊>Journal of the American Chemical Society >Patterned Growth Of Vertically Aligned Zno Nanowire Arrays On Inorganic Substrates At Low Temperature Without Catalyst
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Patterned Growth Of Vertically Aligned Zno Nanowire Arrays On Inorganic Substrates At Low Temperature Without Catalyst

机译：在没有催化剂的情况下，无机衬底上垂直排列的Zno纳米线阵列的图案化生长

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摘要

Vertically aligned ZnO nanowires (NWs) have a variety of astonishing applications in electronics as well as optoelectronic and electromechanical nanodevices, such as solar cells, field emission devices, UV lasers, light emitting diodes, and piezo-nanogene-rators. Growth of aligned ZnO NWs has been achieved on GaN via physical vapor deposition (PVD) at a high temperature of 500-800 ℃, with the use of gold as a catalyst, in which the catalyst initiated and guided the growth, and the epitaxial orientation relationship between the ZnO NWs and the GaN substrate led to the aligned growth. This strategy may have the risk of introducing catalyst residual atoms into the ZnO NWs, which is incompatible with silicon technology.
机译：垂直排列的ZnO纳米线（NW）在电子以及光电子和机电纳米器件中具有各种惊人的应用，例如太阳能电池，场发射器件，UV激光器，发光二极管和压电纳米发生器。在500-800℃的高温下，以金为催化剂，通过物理气相沉积（PVD）在GaN上实现了取向ZnO NW的生长，其中催化剂引发和引导了生长以及外延取向。 ZnO NWs和GaN衬底之间的关系导致取向生长。这种策略可能存在将催化剂残留原子引入ZnO NW的风险，这与硅技术不兼容。

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