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A dislocation-based crystal plasticity framework for dynamic ductile failure of single crystals

机译:基于位错的单晶动态延性破坏的晶体可塑性框架

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A framework for dislocation-based viscoplasticity and dynamic ductile failure has been developed to model high strain rate deformation and damage in single crystals. The rate-dependence of the crystal plasticity formulation is based on the physics of relativistic dislocation kinetics suited for extremely high strain rates. The damage evolution is based on the dynamics of void growth, which are governed by both micro-inertia as well as dislocation kinetics and dislocation substructure evolution. An averaging scheme is proposed in order to approximate the evolution of the dislocation substructure in both the macroscale as well as its spatial distribution at the microscale. Additionally, a concept of a single equivalent dislocation density that effectively captures the collective influence of dislocation density on all active slip systems is proposed here. Together, these concepts and approximations enable the use of semi-analytic solutions for void growth dynamics developed in (Wilkerson and Ramesh, 2014), which greatly reduce the computational overhead that would otherwise be required. The resulting homogenized framework has been implemented into a commercially available finite element package, and a validation study against a suite of direct numerical simulations was carried out.
机译:已经开发了基于位错的粘塑性和动态延性破坏的框架,以模拟单晶中的高应变率变形和损伤。晶体可塑性配方的速率依赖性基于适用于极高应变速率的相对论位错动力学的物理学。损伤的演化是基于空隙生长的动力学,该动力学受微观惯性以及位错动力学和位错亚结构演化的支配。为了估计位错亚结构在宏观尺度上的演变及其在微观尺度上的空间分布,提出了一种平均方案。此外,这里提出了一个等效等效位错密度的概念,该概念有效地捕获了位错密度对所有活动滑移系统的集体影响。这些概念和近似方法一起使用,可以将半解析解用于在(Wilkerson和Ramesh,2014)中开发的空隙增长动力学,这大大减少了否则会需要的计算开销。所得的均质化框架已实施到可商购的有限元软件包中,并且针对一整套直接数值模拟进行了验证研究。

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