Propagation of the photothermal waves in a semiconducting medium under L-S theory

Othman Mohamed I. A.; Tantawi Ramadan S.; Eraki Ebtesam E. M.

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Propagation of the photothermal waves in a semiconducting medium under L-S theory

机译：L-S理论在半导体介质中光热波的传播

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The model of the equations of generalized thermoelasticity based on the Lord-Shulman theory with one relaxation time is used to study the photothermal waves in a semiconducting medium. The exact expressions for the displacement components, temperature, carrier density, and stress components are obtained using normal mode analysis. Numerically simulated results are obtained and presented graphically for silicon to depict the effect of time parameter on the different physical quantities.

机译：基于具有一松弛时间的Lord-Shulman理论的广义热弹性方程模型被用于研究半导体介质中的光热波。位移分量，温度，载流子密度和应力分量的精确表达式是使用正态分析获得的。获得了数值模拟结果，并以图形方式显示了硅，以描述时间参数对不同物理量的影响。

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来源
《Journal of thermal stresses》 |2016年第12期|1419-1427|共9页
作者
Othman Mohamed I. A.; Tantawi Ramadan S.; Eraki Ebtesam E. M.;
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作者单位

Zagazig Univ, Dept Math, Fac Sci, POB 44519, Zagazig, Egypt;

Zagazig Univ, Dept Math, Fac Sci, POB 44519, Zagazig, Egypt;

Zagazig Univ, Dept Math, Fac Sci, POB 44519, Zagazig, Egypt;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Generalized thermoelasticity; normal mode analysis; photothermal waves; semiconductors; thermoelastic coupling parameter;

机译：广义热弹性;正态分析;光热波;半导体;热弹性耦合参数;

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Propagation of the photothermal waves in a semiconducting medium under L-S theory

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